井手利英 (IDE TOSHIHIDE) - マイポータル

基本情報

所属: 独立行政法人産業技術総合研究所先進パワーエレクトロニクス研究センター GaNパワーデバイスチーム

J-GLOBAL ID: 200901052717108467
researchmap会員ID: 5000086258

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T74686447

MISC

Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template

T Ide, M Shimizu, J Kuo, K Jeganathan, XQ Shen, H Okumura

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS (7) 2549-2552 2003年
GaN初期成長におけるSi-ドーピング, GaNテンプレートの効果

日本結晶学会誌 30(2) 24-30 2003年
Ultra-flat and high-quality AlN thin films on sapphire (0001) substrates grown by rf-MBE

XQ Shen, Y Tanizu, T Ide, H Okumura

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS (7) 2511-2514 2003年
Roles of Si irradiation during the growth interruption on GaN film qualities in plasma-assisted molecular beam epitaxy

XQ Shen, HK Cho, T Ide, M Shimizu, H Okumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 41(12B) L1428-L1430 2002年12月
Improvement of DC characteristics in AlGaN/GaN heterojunction field-effect transistors employing AlN spacer layer

T Ide, M Shimizu, S Hara, DH Cho, K Jeganathan, XQ Shen, H Okumura, T Nemoto

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(9) 5563-5564 2002年9月
Growth and characterizations of InGaN on N- and Ga-polarity GaN grown by plasma-assisted molecular-beam epitaxy

X. Q. Shen, T. Ide, M. Shimizu, H. Okumura

Journal of Crystal Growth 237-239(1-4) 1148-1152 2002年4月
Drastic Improvements of the GaN Film Qualities by Applying Si Irradiation During the Growth Interruption in rf-MBE

PHYS STAT SOL (1) 179-182 2002年
超高圧超高分解能透過電子顕微鏡によるGaN極性直接評価とその応用

電子情報通信学会技術研究報告 ED2002-64(LQE2002-39) 81-84 2002年
Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy

IDE T, SHIMIZU M, SHEN X Q, JEGANATHAN K, OKUMURA H, NEMOTO T

JAPANESE JOURNAL OF APPLIED PHYSICS 245(1/2) 15-20 2002年
RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy

MATERIAL SCIENCE FORUM 389-393 1461-1464 2002年
Temperature Dependence of DC Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor

MATERIALS SCIENCE FORUM 389-393 1519-1522 2002年
2DEG characteristics of AlN/GaN heterointerface on sapphire substrates grown by plasma-assisted MBE

K Jeganathan, T Ide, SXQ Shen, M Shimizu, H Okumura

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228(2) 613-616 2001年11月
AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid

T Ide, M Shimizu, A Suzuki, XQ Shen, H Okumura, T Nemoto

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 188(1) 351-354 2001年11月
Advantages of AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid

T Ide, M Shimizu, A Suzuki, XQ Shen, H Okumura, T Nemoto

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40(8) 4785-4788 2001年8月
Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

T Kitamura, SH Cho, Y Ishida, T Ide, XQ Shen, H Nakanishi, S Chichibu, H Okumura

JOURNAL OF CRYSTAL GROWTH 227 471-475 2001年7月
Growth and characterizations of AlGaN/GaN heterostructures using multi-AlN buffer layers in plasma-assisted molecular beam epitaxy

XQ Shen, T Ide, SH Cho, M Shimizu, H Okumura, S Sonoda, S Shimizu

JOURNAL OF CRYSTAL GROWTH 227 447-452 2001年7月
Growth and Characterization of InGaN/GaN Multiple Quantum-Wells on Ga-Polarity GaN by RF-MBE

SHEN X Q, IDE T, SHIMIZU M, SASAKI F, OKUMURA H

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228(1) 99-102 2001年
High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy

SHEN X Q, IDE T, SHIMIZU M, OKUMURA H

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 89(10) 5731-5733 2001年