田中知行 (Tomoyuki Tanaka) - マイポータル - researchmap

基本情報

所属: 独立行政法人産業技術総合研究所先進パワーエレクトロニクス研究センター

J-GLOBAL ID: 200901034293634254
researchmap会員ID: 5000086364

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T63409779

MISC

8

Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substrates

J Nishio, M Hasegawa, K Kojima, T Ohno, Y Ishida, T Takahashi, T Suzuki, T Tanaka, K Arai

JOURNAL OF CRYSTAL GROWTH 258(1-2) 113-122 2003年10月
Influence of stacking faults on the performance of 4H-SiC Schottky barrier diodes fabricated on (11(2)over-bar0) face

K Kojima, T Ohno, T Fujimoto, M Katsuno, N Ohtani, J Nishio, T Suzuki, T Tanaka, Y Ishida, T Takahashi …

APPLIED PHYSICS LETTERS 81(16) 2974-2976 2002年10月
Epitaxial Growth of (11-20)4H-SiC Using Substrate Growth in the [11-20]Direction

MATERIALS SCIENCE FORUM 389-393 195-198 2002年
High-Rate Epitaxial Growth of 4H-SiC using a Vertical-Type,Quasi-Hot-Wall CVD Reactor

MATERIALS SCIENCE FORUM 389-393 179-182 2002年
Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Depositon

MATERIALS SCIENCE FORUM 389-393 215-218 2002年
Influence of the Crystalline Quality of Epitaxial Layer on the Inversion Channel Mobility in 4H-SiC MOSFETS

MATERIAL SCIENCE FORUM 389-393 1053-1056 2002年
Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

MATERIAL SCIENCE FORUM 389-393 227-230 2002年
A large reduction in interface-state density for MOS capacitor on 4H-SiC (11(2)over-bar0) face using H-2 and H2O vapor atmosphere post-oxidation annealing

K Fukuda, J Senzaki, M Kushibe, K Kojima, R Kosugi, S Suzuki, S Harada, T Suzuki, T Tanaka, K Arai

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS 389-3 1057-1060 2002年