MISC

2005年11月

Electrical transport of tetragonal boron nanobelts

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
  • K Kirihara
  • ,
  • Z Wang
  • ,
  • K Kawaguchi
  • ,
  • Y Shimizu
  • ,
  • T Sasaki
  • ,
  • N Koshizaki
  • ,
  • H Hyodo
  • ,
  • K Soga
  • ,
  • K Kimura

23
6
開始ページ
2510
終了ページ
2513
記述言語
英語
掲載種別
DOI
10.1116/1.2131870
出版者・発行元
A V S AMER INST PHYSICS

We measured electrical conductances in single crystalline boron nanobelts having a-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method, We obtained ohmic contacts to both pure and Mg-doped nanobelt by metal electrodes of Ni/Au bilayer. From the temperature dependence of electrical conductance, we found that the pure boron nanobelt is a semiconductor. The electrical conductivity of pure boron nanobelt was estimated to be on the order of 10(-3) (Omega cm)(-1) at room temperature. After Mg vapor diffusion. the electrical conductance increased by a factor of 100 but a transition to metal was not observed. (c) 2005 American Vacuum Society.

リンク情報
DOI
https://doi.org/10.1116/1.2131870
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000234613200047&DestApp=WOS_CPL
ID情報
  • DOI : 10.1116/1.2131870
  • ISSN : 1071-1023
  • Web of Science ID : WOS:000234613200047

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