2005年11月
Electrical transport of tetragonal boron nanobelts
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
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- 巻
- 23
- 号
- 6
- 開始ページ
- 2510
- 終了ページ
- 2513
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1116/1.2131870
- 出版者・発行元
- A V S AMER INST PHYSICS
We measured electrical conductances in single crystalline boron nanobelts having a-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method, We obtained ohmic contacts to both pure and Mg-doped nanobelt by metal electrodes of Ni/Au bilayer. From the temperature dependence of electrical conductance, we found that the pure boron nanobelt is a semiconductor. The electrical conductivity of pure boron nanobelt was estimated to be on the order of 10(-3) (Omega cm)(-1) at room temperature. After Mg vapor diffusion. the electrical conductance increased by a factor of 100 but a transition to metal was not observed. (c) 2005 American Vacuum Society.
- リンク情報
- ID情報
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- DOI : 10.1116/1.2131870
- ISSN : 1071-1023
- Web of Science ID : WOS:000234613200047