松川貴 (Takashi Matsukawa) - マイポータル

基本情報

所属: 国立研究開発法人産業技術総合研究所デバイス技術研究部門先端CMOS技術研究グループ研究グループ付

学位: 博士(工学)(早稲田大学)

J-GLOBAL ID: 200901077113076950

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T34207766

研究分野

ものづくり技術（機械・電気電子・化学工学） / 電子デバイス、電子機器 /

論文

183

Simulation study of short-channel effects of tunnel field-effect transistors

Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Takahiro Mori, Yukinori Morita, Wataru Mizubayashi, Meishoku Masahara, Shinji Migita, Hiroyuki Ota, Kazuhiro Endo, Takashi Matsukawa

Japanese Journal of Applied Physics 57(4) 2018年4月1日査読有り
Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

Takahiro Mori, Hidehiro Asai, Koichi Fukuda, Takashi Matsukawa

Japanese Journal of Applied Physics 57(4) 2018年4月1日査読有り
Enhancement of capacitance benefit by drain offset structure in tunnel field-effect transistor circuit speed associated with tunneling probability increase

Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda

Japanese Journal of Applied Physics 57(4) 2018年4月1日査読有り
Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering

Shintaro Otsuka, Takahiro Mori, Yukinori Morita, Noriyuki Uchida, Yongxun Liu, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Meishoku Masahara, Takashi Matsukawa

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 3 - 7 2017年11月査読有り
Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

Shuichiro Hashimoto, Ryo Yokogawa, Shunsuke Oba, Shuhei Asada, Taiyu Xu, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe

JOURNAL OF APPLIED PHYSICS 122(14) 2017年10月査読有り

もっとみる

MISC

Experimental study of effective carrier mobility of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors with (111) channel surface fabricated by orientation-dependent wet etching

YX Liu, E Sugimata, K Ishii, M Masahara, K Endo, T Matsukawa, H Yamauchi, S O'uchi, E Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45(4B) 3084 - 3087 2006年4月
Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching

K Endo, S Noda, M Masahara, T Kubota, T Ozaki, SJ Samukawa, YX Liu, K Ishii, Y Ishikawa, E Sugimata, T Matsukawa, H Takashinia, H Yamauchi, E Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(8-11) L279 - L281 2006年3月
Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

M Masahara, YX Liu, K Endo, T Matsukawa, K Sakamoto, K Ishii, S O'uchi, E Sugimata, H Yamauchi, E Suzuki

APPLIED PHYSICS LETTERS 88(7) 0721031-0721033 2006年2月
Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs):Technological challenges and future developments

IEEJ Transactions on Electrical and Electronics Engineering 2006年
縦型ダブルゲートMOSFETデバイス技術

電気学会誌 2006年

もっとみる