論文

査読有り
2017年4月

On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS
  • Koichi Fukuda
  • Takahiro Mori
  • Hidehiro Asai
  • Junichi Hattori
  • Wataru Mizubayashi
  • Yukinori Morita
  • Hiroshi Fuketa
  • Shinji Migita
  • Hiroyuki Ota
  • Meishoku Masahara
  • Kazuhiko Endo
  • Takashi Matsukawa
  • 全て表示

56
4
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.7567/JJAP.56.04CD04
出版者・発行元
IOP PUBLISHING LTD

The drain bias dependence of tunnel field-effect transistors (TFETs) is examined on the basis of the measured characteristics and device simulation to understand the electrical behavior of TFETs. Our analyses focus on the long-channel silicon-on-insulator (SOI)-based TFETs as a good basis for further studies of short-channel effects, scaling issues, and more complicated device structures, such as multigate or nanowire TFETs. By device simulation, it is revealed that the drain bias dependence of the transfer characteristics of the measured TFETs is governed by two physical mechanisms: the density of states (DOS) occupancy factor, which depends on drain-to-source bias voltage, and channel electrostatic potential, which is limited by the drain bias through strong carrier accumulation. These mechanisms differ from the drain-induced barrier lowering (DIBL) of metal-oxide-semiconductor field-effect-transistors (MOSFETs), and cause a significant impact even in long-channel SOIs. Finally, the obtained insights are successfully implemented in a TFET compact model. (C) 2017 The Japan Society of Applied Physics

リンク情報
DOI
https://doi.org/10.7567/JJAP.56.04CD04
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000414623100011&DestApp=WOS_CPL
URL
http://orcid.org/0000-0003-0106-6485
ID情報
  • DOI : 10.7567/JJAP.56.04CD04
  • ISSN : 0021-4922
  • eISSN : 1347-4065
  • ORCIDのPut Code : 45262843
  • Web of Science ID : WOS:000414623100011

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