2018年10月25日

10μW/cm²-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology

Digest of Technical Papers - Symposium on VLSI Technology

M. Tomita
S. Oba
Y. Himeda
R. Yamato
K. Shima
T. Kumada
M. Xu
H. Takezawa
K. Mesaki
K. Tsuda
S. Hashimoto
T. Zhan
H. Zhang
Y. Kamakura
Y. Suzuki
H. Inokawa
H. Ikeda
T. Matsukawa
T. Matsuki
T. Watanabe

巻: 2018-June
号
開始ページ: 93
終了ページ: 94
記述言語
掲載種別: 研究論文（国際会議プロシーディングス）
DOI: 10.1109/VLSIT.2018.8510659

© 2018 IEEE. A best benchmark of Si-nanowire (NW) thermoelectric (TE) power generator has been achieved by our proposed planar device architecture compatible with CMOS process technology. The TE power density corresponds to 12 μW/cm2, which is recorded at an externally applied temperature difference of only 5 K. The demonstration opens up a pathway to cost effective autonomous internet of things (IoT) application utilizing environmental and body heats.

リンク情報

DOI: https://doi.org/10.1109/VLSIT.2018.8510659
Scopus: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85055366686&origin=inward
Scopus Citedby: https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85055366686&origin=inward

ID情報

DOI : 10.1109/VLSIT.2018.8510659
ISSN : 0743-1562
SCOPUS ID : 85055366686

エクスポート: BibTeX RIS

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論文

10μW/cm²-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology

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