先崎純寿 (Junji Senzaki) - マイポータル - researchmap

基本情報

所属: 独立行政法人産業技術総合研究所環境・エネルギー分野研究企画室

J-GLOBAL ID: 200901094624269520
researchmap会員ID: 5000086465

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=J37358179

MISC

21

Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato, Atsushi Shimozato, Kenji Fukuda

APPLIED PHYSICS LETTERS 89(2) 022909- 2006年7月
4H-SiC基板上に形成された熱酸化膜の高信頼化技術

電子情報通信学会論文誌Ｃエレクトロニクス J89-C(9) 597-603 2006年
Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals

S Nakashima, T Mitani, J Senzaki, H Okumura, T Yamamoto

JOURNAL OF APPLIED PHYSICS 97(12) 123507-1-123507-8 2005年6月
Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides

J Senzaki, K Kojima, K Fukuda

APPLIED PHYSICS LETTERS 85(25) 6182-6184 2004年12月
Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(000(1)over-bar) face

K Fukuda, M Kato, K Kojima, J Senzaki

APPLIED PHYSICS LETTERS 84(12) 2088-2090 2004年3月
4H-SiC MOSFET on C(000_1) face with inversion channel mobility of 127cm2/Vs

Materials Science Forum 2004年
Influences of postimplantation annealing conditions on resistance lowering in high-phosphorus-implanted 4H-SiC

J Senzaki, K Fukuda, K Arai

JOURNAL OF APPLIED PHYSICS 94(5) 2942-2947 2003年9月
High Inversion Channel Mobility of MOSFET fabricated on 4H-SiC C(000_1) Face Using H2 Post Oxidation Annealing

MATERIALS SCIENCE FORUM 2003年
Correlation between channel mobility and shallow interface traps in SiC metal-oxide-semiconductor field-effect transistors

S Suzuki, S Harada, R Kosugi, J Senzaki, W Cho, K Fukuda

JOURNAL OF APPLIED PHYSICS 92(10) 6230-6234 2002年11月
Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing

R Kosugi, S Suzuki, M Okamoto, S Harada, J Senzaki, K Fukuda

IEEE ELECTRON DEVICE LETTERS 23(3) 136-138 2002年3月
Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor

S Harada, R Kosugi, J Senzaki, WJ Cho, K Fukuda, K Arai, S Suzuki

JOURNAL OF APPLIED PHYSICS 91(3) 1568-1571 2002年2月
Improvements of electrical properties for n-type-implanted 4H-SiC substrates using high-temperature rapid thermal annealing process

MATERIALS SCIENCE FORUM 389 795-798 2002年
Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face using Hydrogen Post Oxidation Annealing

MATERIALS SCIENCE FORUM 389 1061-1064 2002年
Epitaxial Growth of (11-20)4H-SiC Using Substrate Growth in the [11-20]Direction

MATERIALS SCIENCE FORUM 389-393 195-198 2002年
Influence of the Crystalline Quality of Epitaxial Layer on the Inversion Channel Mobility in 4H-SiC MOSFETS

MATERIAL SCIENCE FORUM 389-393 1053-1056 2002年
Improved Channel Mobility in Normally-off 4H-SiC MOSFETs with Buried Channel Structure

MATERIALS SCIENCE FORUM 2002年
Influence of the wet re-oxidation procedure on inversion mobility of 4H-SiC MOSFETs

MATERIAL SCIENCE FORUM 389 1049-1052 2002年
A large reduction in interface-state density for MOS capacitor on 4H-SiC (11(2)over-bar0) face using H-2 and H2O vapor atmosphere post-oxidation annealing

K Fukuda, J Senzaki, M Kushibe, K Kojima, R Kosugi, S Suzuki, S Harada, T Suzuki, T Tanaka, K Arai

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS 389-3 1057-1060 2002年
Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2̄ 0) face

Junji Senzaki, Kazutoshi Kojima, Shinsuke Harada, Ryoji Kosugi, Seiji Suzuki, Takaya Suzuki, Kenji Fukuda

IEEE Electron Device Letters 23(1) 13-15 2002年1月
High channel mobility in normally-off 4H-SiC buried channel MOSFETs

S Harada, S Suzuki, J Senzaki, R Kosugi, K Adachi, K Fukuda, K Arai

IEEE ELECTRON DEVICE LETTERS 22(6) 272-274 2001年6月

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