宮田典幸 (Noriyuki Miyata) - マイポータル

基本情報

所属: 独立行政法人産業技術総合研究所ナノ電子デバイス研究センター新材料インテグレーション研究チーム

J-GLOBAL ID: 200901086828190784
researchmap会員ID: 5000086527

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=N57906549

MISC

Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

Tatsuro Maeda, Tetsuji Yasuda, Masayasu Nishizawa, Noriyuki Miyata, Yukinori Morita, Shinichi Takagi

JOURNAL OF APPLIED PHYSICS 100(1) 014101- 2006年7月
Two-dimensional void growth during thermal decomposition of thin HfO2 films on Si

N Miyata, Y Morita, T Horikawa, T Nabatame, M Ichikawa, A Toriumi

PHYSICAL REVIEW B 71(23) 233302-1-233302-4 2005年6月
Study on oxynitride buffer layers in HfO2 metal-insulator-semiconductor structures for improving metal-insulator-semiconductor field-effect transistor performance

H Ota, N Yasuda, T Yasuda, Y Morita, N Miyata, K Tominaga, M Kadoshima, S Migita, T Nabatame, A Toriumi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(4A) 1698-1703 2005年4月
Correlation between scanning-probe-induced spots and fixed positive charges in thin HfO2 films

N Miyata, H Ota, M Ichikawa

APPLIED PHYSICS LETTERS 86(11) 112906-1-112906-3 2005年3月
Nanometer scale crystallization of thin HfO2 films observed by HF-chemcail etching process

APPLIED PHYSICS LETTERS 86 212907-1-212907-3 2005年
Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

T Maeda, T Yasuda, M Nishizawa, NR Miyata, Y Morita, S Takagi

APPLIED PHYSICS LETTERS 85(15) 3181-3183 2004年10月
Decomposition of SiN interlayer during thermal annealing of HfAlOx/SiN/Si(001) structure

M Kundu, N Miyata, Y Morita, T Horikawa, T Nabatame, M Ichikawa, A Toriumi

APPLIED PHYSICS LETTERS 84(26) 5326-5328 2004年6月
Ge-MIS STRUCTURES BY DIRECT NITRIDATION OF Ge

ECS Symposium on SiGe: Materials, Processing, and Devices, Proceeding vol. 2004-7 07 167-174 2004年
Void nucleation in thin HfO2 layer on Si

N Miyata, T Nabatame, T Horikawa, M Ichikawa, A Toriumi

APPLIED PHYSICS LETTERS 82(22) 3880-3882 2003年6月
Effect of Al2O3 capping layer on suppression of interfacial SiO2 growth in HfO2/ultrathin SiO2/Si(001) structure

M Kundu, N Miyata, T Nabatame, T Horikawa, M Ichikawa, A Toriumi

APPLIED PHYSICS LETTERS 82(20) 3442-3444 2003年5月
Thermal stability of a thin HfO2/ultrathin SiO2/Si structure: Interfacial Si oxidation and silicidation

N Miyata, M Ichikawa, T Nabatame, T Horikawa, A Toriumi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 42(2B) L138-L140 2003年2月
Observation of oscillating behavior in the reflectance difference spectra of oxidized Si(001) surfaces

T Matsudo, T Ohta, T Yasuda, M Nishizawa, N Miyata, S Yamasaki, AA Shklyaev, M Ichikawa

JOURNAL OF APPLIED PHYSICS 91(6) 3637-3643 2002年3月
Effect of oxygen pressure on the structure and thermal stability of ultrathin Al2O3 films on Si(001)

M Kundu, M Ichikawa, N Miyata

JOURNAL OF APPLIED PHYSICS 91(1) 492-500 2002年1月
Selective thermal desorption of ultrathin aluminum oxide layers induced by electron beams

M Kundu, N Miyata, M Ichikawa

APPLIED PHYSICS LETTERS 79(6) 842-844 2001年8月
Optical anisotropy of oxidized Si(001) surfaces and its oscillation in the layer-by-layer oxidation process

PHYSICAL REVIEW LETTERS 87(3) 0374031-0374034 2001年
Electrical characterization of atomic-scale defects in an ultrathin Si oxynitride layer

MIYATA N, ICHIKAWA M

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40(12A) L1271-L1273 2001年