May, 2001
Equilibrium point defect concentration in a growing silicon crystal
MICROELECTRONIC ENGINEERING
- ,
- ,
- Volume
- 56
- Number
- 1-2
- First page
- 133
- Last page
- 137
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1016/S0167-9317(00)00515-3
- Publisher
- ELSEVIER SCIENCE BV
Equilibrium concentrations of point defects in various stages of Si crystal growth are theoretically analyzed. Local equilibrium concentration at the free surface, in the bulk and during the formation of secondary defects, is considered. We show that local equilibrium concentration is not unique during the crystal growth. (C) 2001 Published by Elsevier Science B.V.
- Link information
-
- DOI
- https://doi.org/10.1016/S0167-9317(00)00515-3
- J-GLOBAL
- https://jglobal.jst.go.jp/en/detail?JGLOBAL_ID=201102137514777433
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000168815700018&DestApp=WOS_CPL
- URL
- http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102137514777433
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0035341704&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0035341704&origin=inward
- ID information
-
- DOI : 10.1016/S0167-9317(00)00515-3
- ISSN : 0167-9317
- J-Global ID : 201102137514777433
- SCOPUS ID : 0035341704
- Web of Science ID : WOS:000168815700018