2010年8月
Electronic States of Sulfur Vacancies Formed on a MoS2 Surface
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 49
- 号
- 8
- 開始ページ
- 08LB01.1-08LB01.4
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1143/JJAP.49.08LB01
- 出版者・発行元
- JAPAN SOC APPLIED PHYSICS
Sulfur vacancies formed on a MoS2 surface have been predicted to have electronic states at the Fermi level, and to work as conductive atomic scale structures. We made sulfur vacancies on a MoS2 surface by removing sulfur atoms using scanning tunneling microscopy (STM) induced field evaporation, and measured the current voltage (I/V) characteristics of the vacancies. The I/V curve measured at the vacancies showed a linear increase at a zero bias region, indicating the existence of electronic states at the Fermi level. On the other hand, the I/V curve measured at a clean surface showed a gap of about 1 eV around the Fermi level, as was expected from the theoretical calculation. We also successfully carried out manipulation of Au nanoislands, which will be used as nanopads to be connected to a sulfur vacancy chain. (C) 2010 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.49.08LB01
- ISSN : 0021-4922
- J-Global ID : 201002239638825649
- Web of Science ID : WOS:000281513900004