陳益鋼 (Yigang Chen) - マイポータル

基本情報

所属: 独立行政法人産業技術総合研究所計測フロンティア研究部門超分光システム開発研究グループ

J-GLOBAL ID: 200901076103352899
researchmap会員ID: 5000102374

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=Y81806752

MISC

Diamond Schottky barrier diodes with low specific on-resistance

YG Chen, M Ogura, T Makino, S Yamasaki, H Okushi

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20(12) 1203-1206 2005年12月
Electrical characterization of homoepitaxial diamond p-n(+) junction

T Makino, H Kato, SG Ri, YG Chen, H Okushi

DIAMOND AND RELATED MATERIALS 14(11-12) 1995-1998 2005年11月
Ohmic contacts on p-type homoepitaxial diamond and their thermal stability

YG Chen, M Ogura, S Yamasaki, H Okushi

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20(8) 860-863 2005年8月
Investigation of specific contact resistance of ohmic contacts to B-doped homoepitaxial diamond using transmission line model

YG Chen, A Ogura, S Yamasaki, H Okushi

DIAMOND AND RELATED MATERIALS 13(11-12) 2121-2124 2004年11月
High-performance diamond/amorphous silicon p-n(+) heterojunctions

YG Chen, M Ogura, M Kondo, H Okushi

APPLIED PHYSICS LETTERS 85(11) 2110-2112 2004年9月
Characterization of capacitance-voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film

YG Chen, M Ogura, H Okushi, N Kobayashi

DIAMOND AND RELATED MATERIALS 12(8) 1340-1345 2003年8月
Temperature dependence on current-voltage characteristics of nickel/diamond Schottky diodes on high quality boron-doped homoepitaxial diamond film

YG Chen, M Ogura, H Okushi

APPLIED PHYSICS LETTERS 82(24) 4367-4369 2003年6月
Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact

MATERIALS SCIENCE FORUM 389-393 945-948 2002年
Electrical Properties of Graphite/Homoepitaxial Diamond Contact

DIAMOND AND RELATED MATERIALS 11 451-457 2002年
Electrical Properties of Boron-Implanted CVD Homoepitaxial Diamond Films

PROCEEDINGS OF INTERNATIONAL SYMPOJIUM ON ADVANCED MATERIALS 2002 87-88 2002年