KUMAGAI Yoshinao

J-GLOBAL         Last updated: Nov 21, 2018 at 05:49
 
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Name
KUMAGAI Yoshinao
E-mail
4470kumacc.tuat.ac.jp
URL
http://www.tuat.ac.jp/~kumagai/
Affiliation
Tokyo University of Agriculture and Technology
Section
Institute of Engineering, Division of Applied Chemistry
Job title
Professor
Degree
Doctor (Engineering)(University of Tsukuba)
Other affiliation
Tokyo University of Agriculture and TechnologyTokyo University of Agriculture and TechnologyTokyo University of Agriculture and TechnologyTokyo University of Agriculture and Technology
Research funding number
20313306

Research Areas

 
 

Academic & Professional Experience

 
Apr 1996
 - 
Mar 1999
Researcher, Advance Materials & Processes Laboratory, Texas Instruments, Tsukuba Research & Development Center Ltd.
 
Apr 1999
 - 
Jul 2001
Assistant Professor, Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology
 
Aug 2001
 - 
Mar 2004
Lecturer, Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology
 
Apr 2004
 - 
Nov 2013
Associate Professor, Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology
 
Dec 2013
   
 
Professor, Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology
 

Education

 
Apr 1987
 - 
Mar 1991
Institute of Materials Science, Third Cluster of College, University of Tsukuba
 
Apr 1991
 - 
Mar 1996
Institute of Materials Science, Graduate School, Division of Engineering, University of Tsukuba
 

Committee Memberships

 
May 2016
 - 
Apr 2017
The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’17), April 19-21, 2017, Pacifico Yokohama, Yokohama, Japan  Executive Committee Chair
 
2015
 - 
2017
The 2nd International Workshop on Gallium Oxide and Related Materials (IWGO-2), September 13-15, 2017, Parma University, Parma, Italy  International Program Committee
 
2017
 - 
2017
International Conference on Materials and Systems for Sustainability (ICMaSS2017), September 29-October 1, 2017, Nagoya University, Japan  Organizing Committee
 
Nov 2016
 - 
Mar 2018
International Workshop on UV Materials and Devices 2017 (IWUMD-2017), November 15-18, 2017, Kyushu University, Fukuoka, Japan  Program Committee
 

Awards & Honors

 
Sep 2013
Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport, 第35回応用物理学会論文賞(応用物理学会優秀論文賞), 応用物理学会
Winner: 熊谷義直,久保田有紀,永島徹,木下亨,Rafael Dalmau,Raoul Schlesser,Baxter Moody,Jinqiao Xie,村上尚,纐纈明伯,Zlatko Sitar
 
Nov 2013
HVPE法による窒化アルミニウム単結晶基板の開発, 第20回日本結晶成長学会技術賞, 日本結晶成長学会
Winner: 熊谷義直,永島徹,木下亨,纐纈明伯
 
Sep 2014
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy, 第36回応用物理学会論文賞(応用物理学会優秀論文賞), 応用物理学会
Winner: 木下亨,小幡俊之,永島徹,柳裕之,Baxter Moody,三田清二,井上振一郎,熊谷義直,纐纈明伯,Zlatko Sitar
 

Published Papers

 
Hiroyuki KANAYA, Kunihiro FUJII, Yukiko CHO, Yoshinao KUMAGAI, Fumio HASEGAWA, Eiso YAMAKA
Japanese Journal of Applied Physics   29(12) L2143-L2145   Dec 1990   [Refereed]
Kunihiro FUJII, Hiroyuki KANAYA, Yoshinao KUMAGAI, Fumio HASEGAWA, Eiso YAMAKA
Japanese Journal of Applied Physics   30(3B) L455-L457   Mar 1991   [Refereed]
Yoshinao KUMAGAI, Kunihiro FUJII, Hisashi MATSUMOTO, Fumio HASEGAWA
Japanese Journal of Applied Physics   31(8A) L1103-L1105   Aug 1992   [Refereed]
Yoshinao KUMAGAI, Kouichi ISHIMOTO, Ryosuke MORI, Fumio HASEGAWA
Japanese Journal of Applied Physics   33(1A) L1-L4   Jan 1994   [Refereed]
Kyung-Ho Park, Y. Kumagai, F. Hasegawa
Materials Research Society Symposium Proceedings   320 403-408   Jan 1994

Misc

 
Influence of the Surface Condition on the Thermal Relaxation of Strained SiGe Molecular Beam Epitaxy Layers
Hiroyuki KANAYA, Kunihiro FUJII, Yukiko CHO, Yoshinao KUMAGAI, Fumio HASEGAWA, Eiso YAMAKA
Japanese Journal of Applied Physics   29(12) L2143-L2145   1990
Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
Kunihiro FUJII, Hiroyuki KANAYA, Yoshinao KUMAGAI, Fumio HASEGAWA, Eiso YAMAKA
Japanese Journal of Applied Physics   30(3B) L455-L457   1991
Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
Yoshinao KUMAGAI, Kunihiro FUJII, Hisashi MATSUMOTO, Fumio HASEGAWA
Japanese Journal of Applied Physics   31(8A) L1103-L1105   1992
Yoshinao KUMAGAI, Kouichi ISHIMOTO, Ryosuke MORI, Fumio HASEGAWA
Japanese Journal of Applied Physics   33(1A) L1-L4   1994
Y. Kumagai, F. Hasegawa, K. Park
Journal of Applied Physics   75(6) 3211-3213   1994

Books etc

 
Crystal and Epitaxial Growth Vol. 1
Yoshinao KUMAGAI, Kikurou TAKEMOTO, Hisashi SEKI, Akinori KOUKITU (Part:Joint Work, THICK AND HIGH QUALITY GaN GROWTH ON GaAs (111)A SURFACES FOR PREPARATION OF FREESTANDING GaN SUBSTRATES)
The Stefan University Press   Dec 2002   
2009化合物半導体技術大全
熊谷義直 (Part:Joint Work, AlN基板・応用デバイス)
電子ジャーナル   Feb 2009   
窒化物基板および格子整合基板の成長とデバイス特性
纐纈明伯,熊谷義直 (Part:Joint Work, 窒化ガリウムのハイドライド気相成長)
シーエムシー出版   Oct 2009   
熱力学解析による化合物半導体の気相成長
纐纈明伯,熊谷義直 (Part:Joint Work)
アグネ技術センター   Nov 2009   
Springer Series in Materials Science 133, Technology of Gallium Nitride Crystal Growth
Akinori Koukitu and Yoshinao Kumagai (Part:Joint Work, Hydride Vapor Phase Epitaxy of GaN)
Springer   Mar 2010   

Conference Activities & Talks

 
基板加熱清浄化工程がPtSi/p-Siショットキー特性に及ぼす影響
熊谷義直,藤井邦宏,松本尚,長谷川文夫
第52回応用物理学会学術講演会   11 Oct 1991   応用物理学会
HF処理したSi(111)基板上でのMBEにおけるRHEED強度振動
熊谷義直,藤井邦宏,松本尚,長谷川文夫
第39回応用物理学関係連合講演会   30 Mar 1992   応用物理学会
PtSi/p-Si Schottoky Barrier Formed by Co-Evaporation of Pt and Si [Invited]
Y. Kumagai, K. Fujii, H. Matsumoto and F. Hasegawa
11th Symposium on Alloy Semiconductor Physics and Electronics (ASPEcs-11)   9 Jul 1992   第11回混晶半導体シンポジウム
同時蒸着によるSi(111)基板上へのPtSi層の低温形成
熊谷義直,石本浩一,三宅晃司,長谷川文夫
第53回応用物理学会学術講演会   16 Sep 1992   応用物理学会
PtSi(010)/Si(111)構造上へのSiのエピタキシャル成長
熊谷義直,朴慶浩,石本浩一,三宅晃司,長谷川文夫
第40回応用物理学関係連合講演会   29 Mar 1993   応用物理学会

Research Grants & Projects

 
環境半導体鉄シリサイドの気相エピタキシャル成長
Project Year: Apr 2000 - Mar 2002
インターネットを利用する計算機能を有する気相エピタキシャル成長データベースの構築
Project Year: 2001 - 2002
原料分子およびナノ結晶場制御によるAlNおよびAlGaN厚膜エピタキシー
Project Year: 2003 - 2004
その場重量測定による窒化アルミニウム基板表面反応メカニズムの解明
Project Year: Apr 2005 - Mar 2007
原料分子制御法によるAlNおよびAlGaN混晶の厚膜エピタキシャル成長
Project Year: 2006 - 2010

Social Contribution

 
パワー半導体用のウエハー 酸化ガリウム製、本格生産
[Others]  日経産業新聞  (13面)  12 Sep 2017
本学の技術をもとに、酸化ガリウム製のウエハーが開発されたことが紹介される。