TERAMOTO Akinobu

J-GLOBAL         Last updated: Aug 8, 2019 at 09:09
 
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Name
TERAMOTO Akinobu
E-mail
teramo10hiroshima-u.ac.jp
URL
http://db.tohoku.ac.jp/whois/e_detail/1ec59f4a457a70c4acac497220c05f5b.html
Affiliation
Hiroshima University
Section
Research Institute for Nanodevice and Bio Systems
Job title
Professor
Degree
Ph. D.(Tohoku University)
ORCID ID
0000-0002-4655-9403

Research Interests

 
 

Research Areas

 
 

Academic & Professional Experience

 
Jun 2019
 - 
Today
Professor, Research Institute for Nanodevice and Bio Systems, Hiroshima University
 
Jun 2019
 - 
Today
Visiting Professor, New Industry Creation Hatchery Center, Tohoku University
 
Jul 2014
 - 
May 2019
Professor, New Industry Creation Hatchery Center, Tohoku University
 
Apr 2007
 - 
Jun 2014
Associate professor, New Industry Creation Hatchery Center, Tohoku University
 
Apr 2002
 - 
Mar 2007
Associate Professor, New Industry Hatchery Center, Tohoku University,
 

Education

 
 
 - 
Sep 2001
Graduate school of electronic engineering, Graduate School, Division of Engineering, Tohoku University
 
 
 - 
Mar 1992
Graduate school of electronic engineering, Graduate School, Division of Engineering, Tohoku University
 
 
 - 
Mar 1990
Faculty of electronic engineering, Faculty of Engineering, Tohoku University
 

Committee Memberships

 
Jul 2004
 - 
Today
応用物理学会ゲートスタック研究会  実行・プログラム委員
 
Apr 2003
 - 
Today
日本学術振興会 結晶加工と評価技術第145委員会  運営委員
 
May 2004
 - 
Oct 2008
電子情報通信学会 シリコン材料・デバイス研究専門委員会  専門委員
 

Awards & Honors

 
Sep 2014
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species, Outstanding Paper Award, The Japan Society of Applied Physics
Winner: Tomoyuki Suwa, Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Xiang Li, Yukihisa Nakao, Masashi Yamamoto, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, and Takeo Hattori
 
Oct 2008
X-ray Photoelectron Spectroscopic Study of Nitrogen Depth Profile in Radical Nitrided Silicon Oxynitride Film, 日本真空協会第33回熊谷記念真空科学論文賞, 日本真空協会
Winner: 71.K. Kawase, H. Umeda, M. Inoue, T. Suwa, A. Teramoto, T. Hattori, and T. Ohmi
 

Published Papers

 
Impact of CoFeB surface roughness on reliability of MgO films in CoFeB/MgO/CoFeB magnetic tunnel junction
H. Park, A. Teramoto, J.-I. Tsuchimoto, M. Hayashi, K. Hashimoto, and S. Sugawa
Japanese Journal of Applied Physics   58 SIIB29_1-SIIB29_6   Jul 2019   [Refereed]
SiNx Deposition at Low Temperature Using UV-Irradiated NH3
Y. Shiba, A. Teramoto, T. Suwa, K. Ishii, A. Shimizu, K. Umezawa, R. Kuroda, S. Sugawa
ECS Transactions   89(4) 31-36   Apr 2019   [Refereed]
Statistical Analysis of Threshold Voltage Variation Using MOSFETs With Asymmetric Source and Drain
S. Ichino, A. Teramoto, R. Kuroda, T. Mawaki, T. Suwa, S. Sugawa
IEEE Electron Device Letters   39(12) 1836-1839   Dec 2018   [Refereed]
Fabrication technology and characteristics of MOS device on atomically flat silicon surface
Akinobu Teramoto
Readout   51 44-49   Oct 2018   [Invited]
Impacts of Random Telegraph Noise with Various Time Constants and Number of States in Temporal Noise of CMOS Image Sensors
R. Kuroda, A. Teramoto, S. Sugawa
ITE Transactions on Media Technology and Applications   6(3) 171-179   Jul 2018   [Refereed]
Statistical Analyses of Random Telegraph Noise in Pixel Source Follower with Various Gate Shapes in CMOS Image Sensor
S. Ichino, T. Mawaki, A. Teramoto, R. Kuroda, S. Wakashima, T. Suwa, S. Sugawa
ITE Transactions on Media Technology and Applications   6(3) 163-170   Jul 2018   [Refereed]
Monte Carlo Simulation of Nanowires Array Biosensor With AC Electroosmosis
C. A. Lee, A. Teramoto, H. Watanabe
IEEE Transactions on Electron Devices   65(5) 1932-1938   May 2018   [Refereed]
Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors
S. Ichino, T. Mawaki, A. Teramoto, R. Kuroda, H. Park, S. Wakashima, T. Goto, T. Suwa, S. Sugawa
Japanese Journal of Applied Physics   57 04FF08_1-04FF08_6   Apr 2018   [Refereed]
Experimental investigation of localized stress-induced leakage current distribution in gate dielectrics using array test circuit
H. Park, A. Teramoto, R. Kuroda, T. Suwa, S. Sugawa
Japanese Journal of Applied Physics   57 04FE11_1-04FE11_5   Apr 2018   [Refereed]
Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator
K. Furukawa, A. Teramoto, R. Kuroda, T. Suwa, K. Hashimoto, S. Sugawa, D. Suzuki, Y. Chiba, K. Ishii, A. Shimizu, K. Hasebe
Japanese Journal of Applied Physics   56 105503_1-105503_8   Oct 2017   [Refereed]
Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition
A. Teramoto, M. Saito, T. Suwa, T. Narita, R. Kuroda, S. Sugawa
IEEE Electron Device Letters   38(9) 1309-1312   Sep 2017   [Refereed]
Performances of accumulation-mode n- and p-MOSFETs on Si(110) wafers
P. Gaubert, A. Teramoto, S. Sugawa
Japanese Journal of Applied Physics   56 04CD15_1-04CD15_7   Apr 2017   [Refereed]
Stable yttrium oxyfluoride used in plasma process chamber
Y. Shiba, A. Teramoto, T. Goto, Y. Kishi, Y. Shirai, S. Sugawa
Journal of Vacuum Science & Technology A   35(2) 021405_1-021405_6   Feb 2017   [Refereed]
Evaluating Work-Function and Composition of ErSix on Various Surface Orientation of Silicon
A. Teramoto, H. Tanaka, T. Suwa, T. Goto, R. Kuroda, T. Motoya, K. Kawase, S. Sugawa
ECS Journal of Solid State Science and Technology,   5(10) P608-P613   Sep 2016   [Refereed]
Oxidizing Species Dependence of the Interface Reaction during Atomic-Layer-Deposition Process and Post-Deposition-Anneal
TERAMOTO AkinobuT. Suwa, A. Teramoto, Y. Koda, M. Saito, H. Sugita, M. Hayashi, J. Tsuchimoto, H. Ishii, Y. Shiba, Y. Shirai, S. Sugawa
ECS Transactions   75(5) 207-214   Aug 2016   [Refereed]
Effects of Oxygen Microbubbles on Photoresist Layers under Hot Water Conditions
M. Takahashi, Y. Shirai, A. Teramoto, T. Takahashi, K. Tatera, K. Matsuura, H. Horibe
Journal of Photopolymer Science and Technology   29(4) 643-646   Jun 2016   [Refereed]
Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O2 Post Deposition Annealing
Y. Koda, H. Sugita, T. Suwa, R. Kuroda, T. Goto, A. Teramoto, S. Sugawa
ECS Transactions   72(4) 91-100   May 2016   [Refereed]
Introduction of a High Selectivity Etching Process with Advanced SiNx Etch Gas in the Fabrication of FinFET Structures
T. Kojiri, T. Suwa, K. Hashimoto, A. Teramoto, R. Kuroda, S. Sugawa
ECS Transactions   72(4) 23-30   May 2016   [Refereed]
Detection of short range order in SiO2 thin-films by grazing-incidence wide and small-angle X-ray scattering
K. Nagata, A. Ogura, I. Hirosawa, T. Suwa, A. Teramoto, T. Ohmi
Journal of Applied Physics   119 154103_1-154103_5   Apr 2016   [Refereed]
Proposal of tunneling- and diffusion-current hybrid MOSFET: A device simulation study
K. Furukawa, A. Teramoto, R. Kuroda, T. Suwa, K. Hashimoto, T. Kojiri, S. Sugawa
Japanese Journal of Applied Physics   55 04ED12-1-04ED12-7   Apr 2016   [Refereed]
Impact of doping concentration on 1/ f noise performances of accumulation-mode Si(100) n-MOSFETs
P. Gaubert, A. Teramoto, S. Sugawa
Japanese Journal of Applied Physics   55 04ED08_1-04ED08_6   Apr 2016   [Refereed]
Introduction of Atomically Flattening of Si Surface to Large-Scale Integration Process Employing Shallow Trench Isolation
T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, T. Obara, D. Kimoto, S. Sugawa, Y. Kamata, Y. Kumagai, K. Shibusawa
ECS Journal of Solid State Science and Technology,   5(2) P67-P72   Jan 2016   [Refereed]
Effect of Oxygen Impurity on Nitrogen Radicals in Post-Discharge Flows
Y. Shiba, A. Teramoto, T. Suwa, K. Watanabe, S. Nishimura, Y. Shirai, S. Sugawa
ECS Transactions   69(39) 1-9   Dec 2015   [Refereed]
Structural Analyses of Thin SiO2 Films Formed by Thermal Oxidation of Atomically Flat Si Surface by Using Synchrotron Radiation X-Ray Characterization
K. Nagata, A. Ogura, I. Hirosawa, T. Suwa, A. Teramoto, T. Hattori, T. Ohmi
ECS Journal of Solid State Science and Technology,   4(8) N96-N98   Jun 2015   [Refereed]
Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers
T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, T. Obara, D. Kimoto, S. Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai, K. Shibusawa
Japanese Journal of Applied Physics   54 04DA04_1-04DA04_7   Apr 2015   [Refereed]
Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System
H. Sugita, Y. Koda, T. Suwa, R. Kuroda, T. Goto, H. Ishii, S. Yamashita, A. Teramoto, S. Sugawa, T. Ohmi
ECS Transactions   66(4) 305-314   Mar 2015   [Refereed]
Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern
T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai, K. Shibusawa
ECS Transactions   66(7) 11-21   Mar 2015   [Refereed]
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
T. Suwa, A. Teramoto, T. Goto, M. Hirayama, S. Sugawa, T. Ohmi
ECS Transactions   66(5) 277-283   Mar 2015   [Refereed]
Effect of Hydrogen on Silicon Nitrides Formation by Microwave Excited Plasma Enhanced Chemical Vapor Deposition
A. Teramoto, Y. Nakao, T. Suwa, K. Hashimoto, T. Motoya, M. Hirayama, S. Sugawa, T. Ohmi
ECS Transactions   66(4) 151-159   Mar 2015   [Refereed]
Crystallinity Improvement of Ferroelectric BiFeO3 Thin Film by Oxygen Radical Treatment
F. Imaizumi, T. Goto, A. Teramoto, S. Sugawa, T. Ohmi
ECS Transactions   66(5) 261-267   Mar 2015   [Refereed]
Surface Metal Cleaning of GaN Surface Based on Redox Potential of Cleaning Solution
K. Nagao, K. Nakamura, A. Teramoto, Y. Shirai, F. Imaizumi, T. Suwa, S. Sugawa, T. Ohmi
ECS Transactions   66(7) 11-21   Mar 2015   [Refereed]
Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave
K. Kawase, T. Motoya, Y. Uehara, A. Teramoto, T. Suwa, T. Ohmi
Journal of Vacuum Science & Technology A   32(5) 051502-1-051502-9   May 2014   [Refereed]
Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal–oxide–semiconductor field-effect transistors
T. Obara, A. Yonezawa, A. Teramoto, R. Kuroda, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   53 04EC19_1-04EC19_7   Apr 2014   [Refereed]
Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal–insulator–silicon field-effect transistors
R. Kuroda, Y. Nakao, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   53 04EC04_1-04EC04_7   Apr 2014   [Refereed]
Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma
T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi
ECS Transactions   61(2) 401-407   Mar 2014   [Refereed]
Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching
H. Tanaka, T. Suwa, A. Teramoto, T. Motoya, S. Sugawa, T. Ohmi
ECS Transactions   61(3) 47-53   Mar 2014   [Refereed]
High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET
Y. Nakao, T. Matsuo, A. Teramoto, H. Utsumi, K. Hashimoto, R. Kuroda, Y. Shirai, S. Sugawa, T. Ohmi
ECS Transactions   61(3) 29-37   Mar 2014   [Refereed]
A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel Transistors
R. Kuroda, A. Yonezawa, A. Teramoto, T. L. Li, Y. Tochigi, S. Sugawa
IEEE Transactions on Electron Devices   60(10) 3555-3561   Oct 2013   [Refereed]
High Performance Normally-off GaN MOSFETs on Si Substrates
H. Kambayashi, N. Ikeda, T. Nomura, H. Ueda, Y. Morozumi, K. Harada, K. Hasebe, A. Teramoto, S. Sugawa, T. Ohmi
ECS Transactions   58(4) 155-166   Aug 2013   [Refereed]
Schottky Barrier Height between Erbium Silicide and Various Morphology of Si(100) Surface Changed by Alkaline Etching
H. Tanaka, A. Teramoto, S. Sugawa, T. Ohmi
ECS Transactions   58(7) 349-354   Aug 2013   [Refereed]
A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s
T. Inatsuka, Y. Kumagai, R. Kuroda, A. Teramoto, T. Suwa, S. Sugawa, T. Ohm
IEEE Transactions on Semiconductor Manufacturing   26(3) 288-295   Jul 2013   [Refereed]
Low-Interface-Trap-Density and High-Breakdown-Electric-Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition
T. Watanabe, A. Teramoto, Y. Nakao, S. Sugawa, T. Ohmi
IEEE Transactions on Electron Devices   60(6) 1916-1922   Jun 2013   [Refereed]
Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon Surface Orientation
H. Tanaka, A. Teramoto, T. Motoya, S. Sugawa, T. Ohmi
ECS Transactions   53(1) 343-350   May 2013   [Refereed]
Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(100) substrate near the interface
T. Suwa, A. Teramoto, K. Nagata, A. Ogura, H. Nohira, T. Muro, T. Kinoshita, S. Sugawa, T. Ohmi, T. Hattori
Microelectronic Engineering   109 197-199   Apr 2013   [Refereed]
Stress induced leakage current generated by hot-hole injection
A. Teramoto, H. Park, T. Inatsuka, R. Kuroda, S. Sugawa, T. Ohmi
Microelectronic Engineering   109 298-301   Apr 2013   [Refereed]
High Quality SiO2/Al2O3 Gate Stack for GaN Metal-Oxide-Semiconductor Field-Effect Transistor
H. Kambayashi, T. Nomura, H. Ueda, K. Harada, Y. Morozumi, K. Hasebe, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   52 04CF09_1-04CF09_6   Apr 2013   [Refereed]
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, H. Nohira, T. Muro, T. Kinoshita, S. Sugawa, T. Ohmi, T. Hattori
Japanese Journal of Applied Physics   52 031302_1-031302_14   Mar 2013   [Refereed]
A Test Circuit for Statistical Evaluation of p-n Junction Leakage Current and its Noise
K. Abe, T. Fujisawa, H. Suzuki, S. Watabe, R. Kuroda, S. Sugawa, A. Teramoto, T. Ohmi
IEEE Transactions on Semiconductor Manufacturing   25(3) 303-309   Aug 2012   [Refereed]
A Simple Test Structure for Evaluating the Variability in Key Characteristics of a Large Number of MOSFETs
S. Watabe, A. Teramoto, K. Abe, T. Fujisawa, N. Miyamoto, S. Sugawa, T. Ohmi
IEEE Transactions on Semiconductor Manufacturing   25(2) 145-154   May 2012   [Refereed]
Cu Single Damascene Integration of an Organic Nonporous Ultralow- k Fluorocarbon Dielectric Deposited by Microwave-Excited Plasma-Enhanced CVD
X. Gu, T. Nemoto, Y. Tomita, A. Teramoto, R. Kuroda, S. I. Kuroki, K. Kawase, S. Sugawa, T. Ohmi
IEEE Transactions on Electron Devices   59(5) 1445-1453   May 2012   [Refereed]
Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow- k Dielectric Fluorocarbon on Advanced Cu Interconnects
X. Gu, Y. Tomita, T. Nemoto, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, R. Kuroda, S.-I. Kuroki, K. Kawase, T. Nozawa, T. Matsuoka, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   51 05EC03_1-05EC03_6   May 2012   [Refereed]
Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films
T. Inatsuka, Y. Kumagai, R. Kuroda, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   51 04DC02_1-04DC02_6   Apr 2012   [Refereed]
Hole Mobility in Accumulation Mode Metal-Oxide-Semiconductor Field-Effect Transistors
P. Gaubert, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   51 04DC07_1-04DC07_6   Apr 2012   [Refereed]
High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal-Oxide-Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
H. Kambayashi, T. Nomura, S. Kato, H. Ueda, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   51 04DF03_1-04DF03_4   Apr 2012   [Refereed]
Low Work Function between Erbium Silicide and n-type Silicon Controlled by Cap Film Stress
H. Tanaka, A. Teramoto, S. Sugawa, T. Ohmi
ECS Transactions   45(3) 371-378   Apr 2012   [Refereed]
Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400 oC
Y. Nakao, A. Teramoto, T. Watanabe, R. Kuroda, T. Suwa, S. Sugawa, T. Ohmi
ECS Transactions   45(3) 421-428   Apr 2012   [Refereed]
Influence of Forming Gas Annealing on SiO2/Si(100) Interface Structures Formed Utilizing Oxygen Molecules Different from that Utilizing Oxygen Radicals
T. Suwa, Y. Kumagai, A. Teramoto, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, T. Ohmi
ECS Transactions   45(3) 453-460   Apr 2012   [Refereed]
On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology
R. Kuroda, A. Teramoto, X. Li, T. Suwa, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   51 02BA01_1-02BA01_6   Feb 2012   [Refereed]
Advanced Direct-Polishing Process Development of Non-Porous Ultralow-k Dielectric Fluorocarbon with Plasma Treatment on Cu Interconnects
X. Gu, T. Nemoto, Y. Tomita, A. Teramoto, R. Kuroda, S. Sugawa, T. Ohmi
J. Electrochem. Soc.   159(4) H407-H411   Jan 2012   [Refereed]
1/f CHANNEL NOISE AT HIGH DRAIN CURRENT IN MOS TRANSISTORS
P. Gaubert, A. Teramoto, T. Ohmi
Fluctuation and Noise Letters   10(4) 431-445   Dec 2011   [Refereed]
Tribological Study of Brush Scrubbing in Post-Chemical Mechanical Planarization Cleaning in Non-porous Ultralow-k Dielectric/Cu Interconnects
X. Gu, T. Nemoto, A. Teramoto, M. Sakuragi, S. Sugawa, T. Ohmi
J. Electrochem. Soc.   158(11) H1145-H1151   Nov 2011   [Refereed]
Formation speed of atomically flat surface on Si (100) in ultra-pure argon
X. Li, A. Teramoto, T. Suwa, R. Kuroda, S. Sugawa, T. Ohmi
Microelectronic Engineering   88(10) 3133-3139   Oct 2011   [Refereed]
Highly Reliable Radical SiO2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing
X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   50 10PB05_1-10PB05_7   Oct 2011   [Refereed]
Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal-Oxide-Semiconductor Field-Effect Transistor Electrical Characteristics
Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, R. Kuroda, N. Miyamoto, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   50 106701_1-106701_11   Oct 2011   [Refereed]
Evaluation for Anomalous Stress-Induced Leakage Current of Gate SiO2 Films Using Array Test Pattern
Y. Kumagai, A. Teramoto, T. Inatsuka, R. Kuroda, T. Suwa, S. Sugawa, T. Ohmi
IEEE Transactions on Electron Devices   58(10) 3307-3313   Oct 2011   [Refereed]
High Power Normally-Off GaN MOSFET
H. Kambayashi, Y. Satoh, T. Kokawa, N. Ikeda, T. Nomura, S. Kato, A. Teramoto, S. Sugawa, T. Ohmi
ECS Transactions   41(8) 87-100   Oct 2011   [Refereed][Invited]
Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface
A. Teramoto, X. Li, R. Kuroda, T. Suwa, S. Sugawa, T. Ohmi
ECS Transactions   41(7) 147-156   Oct 2011   [Refereed]
Different Properties of Erbium Silicides on Si(100) and Si(551) Orientation Surfaces
H. Tanaka, A. Teramoto, R. Kuroda, Y. Nakao, T. Suwa, K. Kawase, S. Sugawa, T. Ohmi
ECS Transactions   41(7) 365-373   Oct 2011   [Refereed]
Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced Differential Interference Contrast Microscopy
S.-I. Kobayashi, Y.-G. Kim, R. Wen, K. Yasuda, H. Fukidome, T. Suwa, R. Kuroda, X. Li, A. Teramoto, T. Ohmi, K. Itaya
Electrochemical and Solid-State Letters   14(9) H351-H353   Jun 2011   [Refereed]
Electrical Characteristics of Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and Beyond
X. Gu, T. Nemoto, Y. Tomita, A. Shirotori, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, S.-I. Kuroki, T. Nozawa, T. Matsuoka, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   50(5) 05EB02_1-05EB02_5   May 2011   [Refereed]
Tribological Effects of Brush Scrubbing in Post Chemical Mechanical Planarization Cleaning on Electrical Characteristics in Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects
X. Gu, T. Nemoto, Y. Tomita, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   50(5) 05EC07_1-05EC07_6   May 2011   [Refereed]
Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals versus Oxygen Molecules
T. Suwa, Y. Kumagai, A. Teramoto, T. Muro, T. Kinoshita, T. Ohmi, T. Hattori
ECS Transactions   35(4) 115-122   May 2011   [Refereed]
Pr3Si6N11/Si3N4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si3N4 Interfacial Layers
T. Ohmi, H. Wakamatsu, A. Teramoto
ECS Transactions   35(2) 275-284   May 2011   [Refereed]
Analysis of the Low-Frequency Noise Reduction in Si(100) Metal-Oxide-Semiconductor Field-Effect Transistors
P. Gaubert, A. Teramoto, R. Kuroda, Y. Nakao, H. Tanaka, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   50(4) 04DC01_1-04DC01_6   Apr 2011   [Refereed]
Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface
R. Kuroda, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   50(4) 04DC03_1-04DC03_6   Apr 2011   [Refereed]
Advanced Direct-Polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects
X. Gu, T. Nemoto, Y. Tomita, R. D. Mateo, A. Teramoto, S.-I. Kuroki, S. Sugawa, T. Ohmi
ECS Transactions   34(1) 653-658   Mar 2011   [Refereed]
High-Rate Deposition of Amorphous Silicon Films by Microwave-Excited High-Density Plasma
H. Inoue, K. Tanaka, Y. Sano, T. Nishimura, A. Teramoto, M. Hirayama, T. Ohmi
Japanese Journal of Applied Physics   50(3) 036502_1-036502_6   Mar 2011   [Refereed]
Mesoscopic-Scale and Small Strain Field beneath SiO2/Si Interface Revealed by a Multiple-Wave X-ray Diffraction Phenomenon-Depth of the Strain Field
W. Yashiro, Y. Yoda, T. Takahashi, A. Teramoto, T. Hattori, K. Miki
e-Journal of Surface Science and Nanotechnology   9 47-50   Feb 2011   [Refereed]
Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol–Gel Precursor
K. Watanuki, A. Inokuchi, A. Banba, H. Suzuki, T. Koike, T. Adachi, T. Goto, A. Teramoto, Y. Shirai, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   49(11) 111503_1-111503_5   Nov 2010   [Refereed]
Evaluation of Narrow Gap Filling Ability in Shallow Trench Isolation by Organosiloxane Sol-Gel Precursor
K. Watanuki, A. Inokuchi, A. Banba, N. Manabe, H. Suzuki, T. Koike, T. Adachi, T. Goto, A. Teramoto, Y. Shirai, S. Sugawa, T. Ohmi
ECS Transactions   33(3) 135-143   Oct 2010   [Refereed]
Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation
S. Murakawa, S.-i. Ishizuka, T. Nakanishi, T. Suwa, A. Teramoto, S. Sugawa, T. Hattori, T. Ohmi
Japanese Journal of Applied Physics   49(9) 091301_1-091301_8   Sep 2010   [Refereed]
Relation Between the Mobility,1/f Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers
P. Gaubert, A. Teramoto, W. Cheng, T. Ohmi
IEEE Transactions on Electron Devices   57(7) 1597-1607   Jul 2010   [Refereed]
Statistical Evaluation of Process Damage Using an Arrayed Test Pattern in a Large Number of MOSFETs
S. Watabe, A. Teramoto, K. Abe, T. Fujisawa, N. Miyamoto, S. Sugawa, T. Ohmi
IEEE Transactions on Electron Devices   57(6) 1310-1318   Jun 2010   [Refereed]
End-Point Detection of Ta/TaN Chemical Mechanical Planarization via Forces Analysis
Y. Sampurno, X. Gu, T. Nemoto, Y. Zhuang, A. Teramoto, A. Philipossian, T. Ohmi
Japanese Journal of Applied Physics   49(5) 05FC01_1-05FC01_4   May 2010   [Refereed]
Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals
T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T. Muro, T. Kinoshita, T. Ohmi, T. Hattori
Applied Physics Letters   96(17) 173103_1-173103_3   Apr 2010   [Refereed]
Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS
Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, T. Ohm
ECS Transactions   28(1) 315-324   Apr 2010   [Refereed]
Atomically Flattening Technology at 850˚C for Si(100) Surface
X. Li, T. Suwa, A. Teramoto, R. Kuroda, S. Sugawa, T. Ohmi
ECS Transactions   28(1) 299-309   Apr 2010   [Refereed]
Light-Emitting Diode Based on ZnO by Plasma-Enhanced Metal-Organic Chemical Vapor Deposition Employing Microwave Excited Plasma
H. Asahara, D. Takamizu, A. Inokuchi, T. Goto, M. Hirayama, A. Teramoto, T. Ohmi
Japanese Journal of Applied Physics   49(4) 04DG14_1-04DG14_4   Apr 2010   [Refereed]
Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise
K. Abe, A. Teramoto, S. Watabe, T. Fujisawa, S. Sugawa, Y. Kamata, K. Shibusawa, T. Ohmi
Japanese Journal of Applied Physics   49(4) 04DC07_1-04DC07_5   Apr 2010   [Refereed]
Analysis of Hundreds of Time Constant Ratios and Amplitudes of Random Telegraph Signal with Very Large Scale Array Test Pattern
T. Fujisawa, K. Abe, S. Watabe, N. Miyamoto, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   49(4) 04DC06_1-04DC06_4   Apr 2010   [Refereed]
Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal-Oxide-Silicon Field Effect Transistors
H. Tanaka, T. Isogai, T. Goto, A. Teramoto, S. Sugawa, T. Ohmi
Japanese Journal of Applied Physics   49(4) 04DA03_1-04DA03_5   Apr 2010   [Refereed]
Modelling of the hole mobility in p-channel MOS transistors fabricated on (110) oriented silicon wafers
P. Gaubert, A. Teramoto, T. Ohmi
Solid-State Electronics   54(4) 420-426   Apr 2010   [Refereed]
Very High Performance CMOS on Si(551) Using Radical Oxidation Technology and Accumulation-Mode SOI Device Structure
W. Cheng, A. Teramoto, T. Ohmi
J. Electrochem. Soc.   157(3) H389-H393   Mar 2010   [Refereed]
Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition
H. Asahara, D. Takamizu, A. Inokuchi, M. Hirayama, A. Teramoto, S. Saito, M. Takahashi, T. Ohmi
Thin Solid Films   518(11) 2953-2956   Mar 2010   [Refereed]
Quantitative Analysis of the Strain Field beneath the Si3N4/Si(001) Interface Formed by the Xe/NH3 Plasma Nitridation using a Multiple-Wave X-ray Diffraction Phenomenon
W. Yashiro, Y. Yoda, T. Aratani, A. Teramoto, T. Hattori, K. Miki
Transactions of the Materials Research Society of Japan   34(4) 597-600   Dec 2009   [Refereed]
Very High Performance CMOS on Si(551) Surface using Radical Oxidation Silicon Flattening Technology and Accumulation-mode SOI Device Structure
W. Cheng, A. Teramoto, T. Ohmi
ECS Transactions   25(7) 115-129   Oct 2009   [Refereed]
Hole Mobility in Si(110) p-MOS Transistors
P. Gaubert, A. Teramoto, T. Ohmi.
ECS Transactions   16(40) 7-12   Oct 2009   [Refereed]
Low-Loss Composite Material Containing Fine Zn-Ni-Fe Flakes for High-Frequency Applications
Y. Shirakata, N. Hidaka, M. Ishitsuka, A. Teramoto, T. Ohmi
IEEE Transactions on Magnetics   45(10) 4337-4340   Oct 2009   [Refereed]
The electric properties of low-magnetic-loss magnetic composites containing Zn-Ni-Fe particles
N. Hidaka, M. Ishitsuka, Y. Shirakata, A. Teramoto, T. Ohmi
Journal of Physics: Condensed Matter   21(43) 436009_1-436009_5   Oct 2009   [Refereed]
Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure
W. Cheng, A. Teramoto, T. Ohmi
Microelectronic Engineering   86(7-9) 1786-1788   Sep 2009   [Refereed]

Books etc

 
Different Types of Field-Effect Transistors - Theory and Applications
P. Gaubert and A. Teramoto (Part:Contributor, Chapter 1)
InTech   Jun 2017   
dvances in Noise Analysis, Mitigation and Control
P. Gaubert and A. Teramoto (Part:Contributor, Chapter 1)
InTech   Oct 2016   
Advanced Gate Stacks for High-Mobility Semiconductors
A. Teramoto and T. Ohmi (Part:Joint Work, 21-24頁)
Springer   Jul 2007   ISBN:10-3-540-71490-1
Scientific Wet Process Technology for Innovative LSI/FPD Manufacturing
H. Morita, A. Teramoto, H. Morinaga, S. Ojima, K. Mitsumori, T. Yabune, M. Miyashita, H. Kikuyama, J. takano (Part:Joint Work, 61-250)
Taylor & Francis   2006   
-
Akinobu Teramoto, Tadahiro Ohmi (Part:Joint Work, 489-497)
Fuji Techno System   Mar 2005   ISBN:4-938555-95-6

Conference Activities & Talks

 
SiNx Deposition at Low Temperature Using UV-Irradiated NH3
Y. Shiba, A. Teramoto, T. Suwa, K. Ishii, A. Shimizu, K. Umezawa, R. Kuroda, and S. Sugawa
235th ECS Meeting   26 May 2019   
Impact of Y-O-F Composition in Yttrium Oxyfluoride on Corrosion Resistance to Plasma Irradiation [Invited]
A. Teramoto, Y. Shiba, T. Goto, Y. Kishi, and S. Sugawa
5th Annual World Congress of Smart Materials   6 Mar 2019   
An Electrical Impedance Biosensor Array for Tracking Moving Cells
N. Ogata, A. Shina, T. Komiya, Y. Iizuka, K. Matsuse, F. Imaizumi, T. Suwa, and A. Teramoto
IEEE SENSORS   28 Oct 2018   
Corrosion Resistance to F and Cl plasma of Yttrium Oxyfluoride (YOF) formed by Sintering
A. Teramoto, Y. Shiba, T. Goto, Y. Kishi, and S. Sugawa
AVS 65th International Symposium   21 Oct 2018   
Effects of Process Gases and Gate TiN Electrode during the Post Deposition Anneal to ALD-Al2O3 Dielectric Film
M. Saito, A. Teramoto, T. Suwa, K. Nagumo, Y. Shiba, R. Kuroda, and S. Sugawa
VS 65th International Symposium   21 Oct 2018   
Impact of CoFeB Surface Roughness on Reliability of MgO Films in CoFeB/MgO/CoFeB Magnetic Tunnel Junction
H. W. Park, A. Teramoto, J. Tsuchimoto, M. Hayashi, K. Hashimoto, and S. Sugawa
4th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures & 26th International Colloquium on Scanning Probe Microscopy   21 Oct 2018   
Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa
IEICE Technical Committee on Silicon Device and Materials   17 Oct 2018   
Impacts of Boron Concentration and Annealing Temperature on Electrical Characteristics of CoFeB/MgO/CoFeB Magnetic Tunnel Junction
H. Park, A. Teramoto, J.-i. Tsuchimoto, M. Hayashi, K. Hashimoto, R. Kuroda, and S. Sugawa
International Conference on Solid State Devices and Materials   9 Sep 2018   
Improved Conductance Method for Interface Trap Density of ZrO2-Si interface
H. J. Lin, A. Teramoto, H. Watanabe, R. Kurota, K. Umezawa, K. Furukawa, and S. Sugawa
International Conference on Solid State Devices and Materials   9 Sep 2018   
Impact of atomically flat SiO2/Si interface on improvement of MOS device performance [Invited]
A. Teramoto, T. Suwa, R. Kuroda, and S. Sugawa
European Advanced Materials Congress   21 Aug 2018   
Reliability of MgO in Magnetic Tunnel Junctions Formed by MgO Sputtering and Mg Oxidation
A. Teramoto, K. Hashimoto, T. Suwa, J.-i. Tsuchimoto, M. Hayashi, H. Park, and S. Sugawa
IEEE International Reliability Physics Symposium   11 Mar 2018   
Corrosion Resistance of Yttrium Trifluoride (YF3) and Yttrium Oxyfluoride (YOF) used in Plasma Process Chamber
Y. Shiba, A. Teramoto, T. Goto, and Y. Kishi
AVS 64th International Symposium   29 Oct 2017   
Difference of the Hysteresis in Capacitance-voltage Characteristics of ALD-Al2O3 MIS Capacitors on Si and GaN Substrate
M. Saito, T. Suwa, A. Teramoto, T. Narita, and T. Kachi
AVS 64th International Symposium   29 Oct 2017   
Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit
Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa
IEICE Technical Committee on Silicon Device and Materials   26 Oct 2017   
Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process
Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto,Daiki Kimoto, Shigetoshi Sugawa
IEICE Technical Committee on Silicon Device and Materials   25 Oct 2017   
Statistical analysis of random telegraph noise in pixel source follower -- Impacts of transistor shape, time constants and number of states --
Rihito Kuroda, Akinobu Teramoto, Shinya Ichino, Takezo Mawaki, Shunichi Wakashima, Shigetoshi Sugawa
The Institute of Image Information and Television Engineers   25 Sep 2017   
Monte-Carlo Simulation of Biomolecules' Fluid-Dynamics in Electrolyte Facing Nanowires Biosensor
C.-A. Lee, A. Teramoto, and H. Watanabe
17th IEEE International Conference on Nanotechnology   25 Jul 2017   
Atomically flat interface for noise reduction in SOIMOSFETs
P. Gaubert, A. Kircher, H. Park, R. Kuroda, S. Sugawa, T. Goto, T. Suwa, and A. Teramoto
24th International Conference on Noise and Fluctuations   20 Jun 2017   
Improvement in Electrical Characteristics of ALD Al2O3 Film by Microwave Excited Ar/O2 Plasma Treatment
M. Saito, T. Suwa, A. Teramoto, Y. Koda, R. Kuroda, Y. Shiba, S. Sugawa, J. Tsuchimoto, and M. Hayashi.
231st ECS Meeting   15 Apr 2017   
Impact of SiO2/Si interface micro-roughness on SILC distribution and dielectric breakdown: A comparative study with atomically flattened devices
H. Park, T. Goto, R. Kuroda, A. Teramoto, T. Suwa, D. Kimoto, and S. Sugawa
IEEE International Reliability Physics Symposium   2 Apr 2017   
High Quality Film and Interface Formation using Appropriate Reaction Species [Invited]
Akinobu Teramoto
AVS 63rd International Symposium   9 Nov 2016   
Behavior of Random Telegraph Noise toward Bias Voltage Changing
Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa
IEICE Technical Committee on Silicon Device and Materials   27 Oct 2016   
Formation technology of Flat Surface after Selective Epitaxial Growth on Ion-Implanted (100) Oriented Thin SOI Wafers
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa, Daisuke Suzuki, Yoichiro Chiba, Katsutoshi Ishii, Akira Shimizu, Kazuhide Hasebe
IEICE Technical Committee on Silicon Device and Materials   26 Oct 2016   
Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition
Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa, Marie Hayashi, Junichi Tsuchimoto
IEICE Technical Committee on Silicon Device and Materials   26 Oct 2016   
Low Frequency Noise of Accumulation-Mode n- and p-MOSFETs fabricated on (110) Crystallographic Silicon-Oriented Wafers
P. Gaubert, A. Teramoto, and S. Sugawa
International Conference on Solid State Devices and Materials   26 Sep 2016   
Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implanted (100) Oriented Thin SOI Wafers
K. Furukawa, A. Teramoto, R. Kuroda, T. Suwa, K. Hashimoto, S. Sugawa, D. Suzuki, Y. Chiba, K. Ishii, A. Shimizu, and K. Hasebe
International Conference on Solid State Devices and Materials   26 Sep 2016   
Oxidizing Species Dependence of the Interface Reaction during Atomic-Layer-Deposition Process and Post-Deposition-Anneal
T. Suwa, A. Teramoto, Y. Koda, M. Saito, H. Sugita, M. Hayashi, J. Tsuchimoto, H. Ishii, Y. Shiba, Y. Shirai, and S. Sugawa
PRiME Meeting   1 Sep 2016   
Introduction of a High Selectivity Etching Process with Advanced SiNx Etch Gas in the Fabrication of FinFET Structures
T. Kojiri, T. Suwa, K. Hashimoto, A. Teramoto, R. Kuroda, and S. Sugawa
229th ECS Meeting   31 May 2016   
Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O2 Post Deposition Annealing
Y. Koda, H. Sugita, T. Suwa, R. Kuroda, T. Goto, A. Teramoto, and S. Sugawa
229th ECS Meeting   31 May 2016   
Random Telegraph Noise Measurement and Analysis based on Arrayed Test Circuit toward High S/N CMOS Image Sensors [Invited]
R. Kuroda, A. Teramoto, and S. Sugawa
IEEE International Conference on Microelectronic Test Structures   28 May 2016   
Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller
Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii, Satoru Yamashita, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
IEICE Technical Committee on Silicon Device and Materials   30 Oct 2015   
A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Takashi Kojiri, Shigetoshi Sugawa
IEICE Technical Committee on Silicon Device and Materials   30 Oct 2015   
Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface
Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa
IEICE Technical Committee on Silicon Device and Materials   29 Oct 2015   
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi
IEICE Technical Committee on Silicon Device and Materials   29 Oct 2015   
Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment
uminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa
IEICE Technical Committee on Silicon Device and Materials   29 Oct 2015   
Effect of Oxygen Impurity on Nitrogen Radicals in Post-Discharge Flows
Y. Shiba, A. Teramoto, T. Suwa, K. Watanabe, S. Nishimura, Y. Shirai, and S. Sugawa
228th ECS Meeting   11 Oct 2015   
1/f Noise Performances and Noise Sources of Accumulation Mode Si(100) n-MOSFETs
P. Gaubert, A. Teramoto, and S. Sugawa
International Conference on Solid State Devices and Materials   29 Sep 2015   
Proposal of Tunneling and Diffusion Current Hybrid MOSFET
K. Furukawa, R. Kuroda, T. Suwa, K. Hashimoto, A. Teramoto, and S. Sugawa
International Conference on Solid State Devices and Materials   29 Sep 2015   
Drastic suppression of the 1/f noise in MOSFETs: Fundamental fluctuations of mobility rather than induced mobility fluctuations
P. Gaubert, A. Teramoto, S. Sugawa
International Conference on Noise and Fluctuations   2 Jun 2015   
Effect of Hydrogen on Silicon Nitrides Formation by Microwave Excited Plasma Enhanced Chemical Vapor Deposition
A. Teramoto, Y. Nakao, T. Suwa, K. Hashimoto, T. Motoya, M. Hirayama, S. Sugawa, and T. Ohmi
227th ECS Meeting   24 May 2015   
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
T. Suwa, A. Teramoto, T. Goto, M. Hirayama, S. Sugawa, and T. Ohmi
227th ECS Meeting   24 May 2015   
Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System
H. Sugita, Y. Koda, T. Suwa, R. Kuroda, T. Goto, H. Ishii, S. Yamashita, A. Teramoto, S. Sugawa, and T. Ohmi
227th ECS Meeting   24 May 2015   
Surface Metal Cleaning of GaN Surface Based on Redox Potential of Cleaning Solution
K. Nagao, K. Nakamura, A. Teramoto, Y. Shirai, F. Imaizumi, T. Suwa, S. Sugawa, and T. Ohmi
227th ECS Meeting   24 May 2015   
Crystallinity Improvement of Ferroelectric BiFeO3 Thin Film by Oxygen Radical Treatment
F. Imaizumi, T. Goto, A. Teramoto, S. Sugawa, and T. Ohmi
227th ECS Meeting   24 May 2015   
Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern
T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai, and K. Shibusawa
227th ECS Meeting   24 May 2015   
Effect of random telegraph noise reduction by atomically flat gate insulator film/Si interface
Rihito Kuroda, Toshiki Obara, Tetsuya Goto, Naoya Akagawa, Daiki Kimoto, Akinobu Teramoto, Shigetoshi Sugawa
The Institute of Image Information and Television Engineers   8 May 2015   
Analysis of trap density causing random telegraph noise in MOSFETs
Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi
IEICE Technical Committee on Silicon Device and Materials   17 Oct 2014   
Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation
Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
IEICE Technical Committee on Silicon Device and Materials   17 Oct 2014   
Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa
IEICE Technical Committee on Silicon Device and Materials   16 Oct 2014   
Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers
T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and K. Sibusawa
International Conference on Solid State Devices and Materials   8 Sep 2014   

Patents

 
US9875899 : Semiconductor transistor
Hiroshi Kambayashi, Katsunori Ueno, Takehiko Nomura, Yushiro Sato, Akinobu Teramoto, Tadahiro Ohmi
US10043654 : Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate
Kenji Nagao, Kenichi Nakamura, Akinobu Teramoto
US9543191 : Wiring structure having interlayer insulating film and wiring line without a barrier layer between
Takenao Nemoto, Takehisa Saito, Yugo Tomita, Hirokazu Matsumoto, Akihide Shirotani, Akinobu Teramoto Xun Gu
US9299844 : Accumulation-mode MOSFET and driving method thereof
Akinobu Teramoto
US9230799 : Method for fabricating semiconductor device and the semiconductor device
Akinobu Teramoto, Hiroshi Kambayashi, Hirokazu Ueda, Yuichiro Morozumi, Katsushige Harada, Kazuhide Hsebe, Tadahiro Ohmi
US9157681 : Surface treatment method for atomically flattening a silicon wafer and heat treatment apparatus
Tadahiro Ohmi, Akinobu Teramoto, Tomoyuki Suwa
US9153658 : Semiconductor device and method of manufacturing the same
Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa
US8,999,788 : Manufacturing method of GaN-based semiconductor device and semiconductor device
Hiroshi Kambayashi, Akinobu Teramoto, Tadahiro Ohmi
US8906796 : Method of producing semiconductor transistor
Hiroshi Kambayashi, Akinobu Teramoto, Tadahiro Ohmi
US8841545 : Solar cell wherein solar photovolatic thin film is directly formed on base
Yoshihide Wakayama, Kazuki Moyama, Tadahiro Ohmi, Akinobu Teramoto