2015年12月
Magnetic and electronic states in (LaMnO3)(2)(SrMnO3)(2) superlattice exhibiting a large negative magnetoresistance
PHYSICAL REVIEW B
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- 巻
- 92
- 号
- 24
- 開始ページ
- 245104
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.92.245104
- 出版者・発行元
- AMER PHYSICAL SOC
Magnetic and electronic states in (LaMnO3)(2)(SrMnO3)(2) superlattices fabricated on an (LaAlO3)(0.3)(SrAl0.5Ta0.5O3)(0.7) substrate, which exhibit a large nontrivial negative magnetoresistance (MR) effect, have been investigated. The crystal structure and the Mn valence state were determined using x-ray scattering measurements near the Mn K edge. These measurements revealed that the Mn valences in the LaMnO3 and SrMnO3 layers are 3+ and 4+, respectively; that is, valence modulation coincides with the La/Sr stacking structure. The Mn spin structure was studied by means of resonant soft x-ray scattering at the Mn L-2,L-3 edge and neutron magnetic scattering measurements. We succeeded in detecting a magnetic signal indicating ferromagnetism at the interface. Finally, we suggest that the origin of the MR is the competition between ferromagnetism at the interface and underlying antiferromagnetism.
- リンク情報
- ID情報
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- DOI : 10.1103/PhysRevB.92.245104
- ISSN : 2469-9950
- eISSN : 2469-9969
- Web of Science ID : WOS:000366092200004