論文

2022年4月1日

Study of high–low KPFM on a pn-patterned Si surface

Microscopy
  • Ryo Izumi
  • ,
  • Yan Jun Li
  • ,
  • Yoshitaka Naitoh
  • ,
  • Yasuhiro Sugawara

71
2
開始ページ
98
終了ページ
103
記述言語
掲載種別
研究論文(学術雑誌)
DOI
10.1093/jmicro/dfab055
出版者・発行元
Oxford University Press (OUP)

Abstract

Comparative measurements between frequency modulation Kelvin probe force microscopy (FM-KPFM) using low frequency bias voltage and heterodyne FM-KPFM using high frequency bias voltage were performed on the surface potential measurement. A silicon substrate patterned with p- and n-type impurities was used as a quantitative sample. The multi-pass scanning method in the measurements of FM-KPFM and heterodyne FM-KPFM was used to eliminate the effect of the tip–sample distance dependence. The measured surface potentials become lower in the order of the p-type region, n-type region and n+-type region by both FM-KPFM and heterodyne FM-KPFM, which are in good agreement with the order of the work functions of the pn-patterned Si sample. We observed the difference in the surface potentials due to the surface band bending measured by FM-KPFM and heterodyne FM-KPFM. The difference is due to the fact that the charge transfer between the surface and bulk levels may or may not respond to AC bias voltage.

リンク情報
DOI
https://doi.org/10.1093/jmicro/dfab055
URL
https://academic.oup.com/jmicro/advance-article-pdf/doi/10.1093/jmicro/dfab055/42150068/dfab055.pdf
URL
https://academic.oup.com/jmicro/article-pdf/71/2/98/43223881/dfab055.pdf
ID情報
  • DOI : 10.1093/jmicro/dfab055
  • ISSN : 2050-5698
  • eISSN : 2050-5701

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