2022年8月8日
Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 0001¯) substrates
Applied Physics Letters
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- 巻
- 121
- 号
- 6
- 開始ページ
- 062104
- 終了ページ
- 062104
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/5.0095468
- 出版者・発行元
- AIP Publishing
The interface properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor (MOS) structures fabricated on N-polar GaN([Formula: see text]) substrates were investigated by electrical measurements and synchrotron-radiation x-ray photoelectron spectroscopy. They were then compared with those of SiO2/GaN MOS structures on Ga-polar GaN(0001). Although the SiO2/GaN([Formula: see text]) structure was found to be more thermally unstable than that on the GaN(0001) substrate, excellent electrical properties were obtained for the SiO2/GaN([Formula: see text]) structure by optimizing conditions for post-deposition annealing. However, the conduction band offset for SiO2/GaN([Formula: see text]) was smaller than that for SiO2/GaN(0001), leading to increased gate leakage current. Therefore, caution is needed when using N-polar GaN([Formula: see text]) substrates for MOS device fabrication.
- ID情報
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- DOI : 10.1063/5.0095468
- ISSN : 0003-6951
- eISSN : 1077-3118