論文

査読有り
2012年10月

Planar pixel sensors for the ATLAS upgrade: Beam tests results

Journal of Instrumentation
  • J. Weingarten
  • ,
  • S. Altenheiner
  • ,
  • M. Beimforde
  • ,
  • M. Benoit
  • ,
  • M. Bomben
  • ,
  • G. Calderini
  • ,
  • C. Gallrapp
  • ,
  • M. George
  • ,
  • S. Gibson
  • ,
  • S. Grinstein
  • ,
  • Z. Janoska
  • ,
  • J. Jentzsch
  • ,
  • O. Jinnouchi
  • ,
  • T. Kishida
  • ,
  • A. La Rosa
  • ,
  • V. Libov
  • ,
  • A. MacChiolo
  • ,
  • G. Marchiori
  • ,
  • D. Muenstermann
  • ,
  • R. Nagai
  • ,
  • G. Piacquadio
  • ,
  • B. Ristic
  • ,
  • I. Rubinskiy
  • ,
  • A. Rummler
  • ,
  • Y. Takubo
  • ,
  • G. Troska
  • ,
  • S. Tsiskaridtze
  • ,
  • I. Tsurin
  • ,
  • Y. Unno
  • ,
  • P. Weigell
  • ,
  • T. Wittig

7
10
開始ページ
P10028
終了ページ
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1088/1748-0221/7/10/P10028

The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC. © 2012 IOP Publishing Ltd and Sissa Medialab srl.

リンク情報
DOI
https://doi.org/10.1088/1748-0221/7/10/P10028
URL
http://stacks.iop.org/1748-0221/7/i=10/a=P10028
URL
http://orcid.org/0000-0001-7503-2777

エクスポート
BibTeX RIS