論文

2016年10月

Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O-3 thin films by two-step growth technique

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
  • Shinya Kondo
  • ,
  • Tomoaki Yamada
  • ,
  • Masahito Yoshino
  • ,
  • Tadashi Shiota
  • ,
  • Kazuo Shinozaki
  • ,
  • Takanori Nagasaki

124
10
開始ページ
1127
終了ページ
1131
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.2109/jcersj2.16110
出版者・発行元
CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI

(001)-epitaxial (Pb0.91La0.09)(Zr0.65Ti0.35)O-3 (PLZT) ferroelectric thin films were fabricated on SrTiO3 and MgO substrates, with an SrRuO3 bottom electrode layer, using pulsed laser deposition. When films were deposited in a single step at a high temperature conventionally used for epitaxial growth, island growth was observed. To suppress the island growth, we used a two-step growth technique. First, a thin initial layer was deposited at a low temperature to promote rapid strain relaxation from the lattice mismatch. Consequently, the island growth was suppressed and when a second layer was deposited at high temperature, a remarkably flatter surface was achieved as compared with that of conventional one-step-grown films. The two-step-grown PLZT films are promising for use in ferroelectric thin film-based plasmonic electro-optic devices. (C) 2016 The Ceramic Society of Japan. All rights reserved.

Web of Science ® 被引用回数 : 1

リンク情報
DOI
https://doi.org/10.2109/jcersj2.16110
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000392429300027&DestApp=WOS_CPL

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