Oct, 2016
Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O-3 thin films by two-step growth technique
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
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- Volume
- 124
- Number
- 10
- First page
- 1127
- Last page
- 1131
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.2109/jcersj2.16110
- Publisher
- CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI
(001)-epitaxial (Pb0.91La0.09)(Zr0.65Ti0.35)O-3 (PLZT) ferroelectric thin films were fabricated on SrTiO3 and MgO substrates, with an SrRuO3 bottom electrode layer, using pulsed laser deposition. When films were deposited in a single step at a high temperature conventionally used for epitaxial growth, island growth was observed. To suppress the island growth, we used a two-step growth technique. First, a thin initial layer was deposited at a low temperature to promote rapid strain relaxation from the lattice mismatch. Consequently, the island growth was suppressed and when a second layer was deposited at high temperature, a remarkably flatter surface was achieved as compared with that of conventional one-step-grown films. The two-step-grown PLZT films are promising for use in ferroelectric thin film-based plasmonic electro-optic devices. (C) 2016 The Ceramic Society of Japan. All rights reserved.
- Link information
- ID information
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- DOI : 10.2109/jcersj2.16110
- ISSN : 1882-0743
- eISSN : 1348-6535
- Web of Science ID : WOS:000392429300027