論文

2018年9月

Strong impact of SrTiO3/TiO2 buffer layer on epitaxial growth and dielectric response of Ba0.7Sr0.3TiO3 thin films on MgO

JAPANESE JOURNAL OF APPLIED PHYSICS
  • Shinya Kondo
  • ,
  • Tomoaki Yamada
  • ,
  • Masahito Yoshino
  • ,
  • Takanori Nagasaki

57
9
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.7567/JJAP.57.0902B1
出版者・発行元
IOP PUBLISHING LTD

We demonstrate a significant improvement in the epitaxial growth of perovskite dielectric films on MgO by introducing a SrTiO3 (STO)/TiO2 buffer layer, which enhances their dielectric response. 270-nm-thick (001)-epitaxial (Ba, Sr) TiO3 (BST) films were deposited by pulsed laser deposition on STO/TiO2-buffered MgO with a SrRuO3 (SRO) bottom electrode. The film directly deposited on SRO/MgO grew in a three-dimensional mode, resulting in a rough and poorly crystalline film with an almost relaxed strain. On the other hand, the film with a buffer layer grew in a two-dimensional mode, resulting in a flat and highly crystalline film with a large compressive strain (-0.80%). As a result, the paraelectric-to-ferroelectric phase transition temperature increased by 220 degrees C and an out-of-plane dielectric constant exceeding 1000 was achieved. (C) 2018 The Japan Society of Applied Physics


リンク情報
DOI
https://doi.org/10.7567/JJAP.57.0902B1
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000435875000001&DestApp=WOS_CPL

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