Shingo Sato

Profile Information

Affiliation: Associate Professor, Faculty of Engineering Science, Kansai University

Degree: 博士(工学)(Mar, 2008)

Researcher number: 60709137
J-GLOBAL ID: 201801001581290157
researchmap Member ID: B000307047

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

Papers

The spds*p*+Δ tight binding model for 3C-SiC

S. Kanai, T. Nishikawa, S. Sato

Japanese Journal of Applied Physics, 63(4) 040907-040907, Apr 1, 2024 Peer-reviewedCorresponding author
Detailed analysis of electrical components on a layered wafer via the AC pseudo-MOS method

Y. Yuan, S. Sato

Solid State Electronics, Volume 210, December 2023, 108811, Dec, 2023 Peer-reviewed
Impact of Band Structure on Phonon-Limited Electron Mobility Behavior of Germanium-on-Insulator Layer with (001) and (111) Surfaces

Y. Omura, T. Yamamura, S. Sato

Jordan Journal of Electrical Engineering,, vol. 7, no. 3, p.203-230,, Sep, 2021 Peer-reviewed
Detailing Influence of Contact Condition and Island Edge on Dual-Configuration Kelvin Pseudo-MOSFET Method

MORI, Daigo, NAKATA, Iori, MATSUDA, Masayoshi, SATO, Shingo

IEEE Transactions on Electron Devices, vol. 68, No. 6, pp.2906-2911, Apr, 2021 Peer-reviewed
Theoretical analysis of the impacts of light illumination on the transient current of sputter-deposited non-doped ZnO films

OMURA, Yasuhisa, SATO,Shingo

AIP Advances, 11, 015030, Jan, 2021 Peer-reviewed
Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET

S. Sato, G. Ghibaudo, L. Benea, I. Ionica, Y. Omura, S. Cristloveanu

Solid State Electronics, Vol. 159, Sep. 2019, pp. 197-203, Sep, 2019 Peer-reviewed
Measuring Impact of Light on the Resistance of Non-Doped ZnO Films

TAKAHASHI, Naoto, SATO,Shingo, OMURA, Yasuhisa, SAITOH, Tadashi

ECS Journal of Solid State Science and Technology, volume 8, issue 1, pp. 57-61, 2019, Feb, 2019 Peer-reviewed
Study on the Impacts of Hole Injection and Inclusion of Sub-oxide and Metallic Si Atoms on Repeatable Resistance Switching of Sputter-Deposited Silicon Oxide Films

Y. Omura, R. Yamaguchi, S. Sato

IEEE Transactions on Device and Materials Reliability, Volume: 18, Issue:4, pp.561-567, Dec, 2018 Peer-reviewed
Possible Models of Electron-Energy Transfer in Resistance Switching by Sputter-Deposited Silicon Oxide Films: Potential of Extremely Low-Energy Switching

Y. Omura, T. Akano, S. Sato

ECS Journal of Solid State Science and Technology, volume 7, issue 3, Q21-Q25, Feb, 2018 Peer-reviewed
Novel Addressable Test Structure for Detecting Soft Failure of Resistive Elements when Developing Manufacturing Procedures

S. Sato, Y. Omura

IEEE Transactions on Semiconductor Manufacturing, Vol. 31, Issue. 1, pp.124-129, 2018 Peer-reviewed
Revisiting the Role of Trap-Assisted-Tunneling Process on Current-Voltage Characteristics in Tunnel Field-Effect Transistors

Y. Omura, Y. Mori, S. Sato, A. Mallik

Journal of Applied Physics, vol. 123, pp. 161549-1-161549-6, Dec, 2017 Peer-reviewed
On the Definition of Threshold Voltage for Tunnel FETs

Y. Mori, S. Sato, Y. Omura, A. Chattopadhyay, A. Mallik

Superlattices and Microstructures, vol. 107, pp. 17-27, Apr, 2017 Peer-reviewed
Roles of chemical stoichiometry and hot electrons in realizing the stable resistive transition of sputter-deposited silicon oxide films

R. Yamaguchi, S. Sato, Y. Omura

Japanese Journal of Applied Physics, vol. 56, No. 4, pp. 041301-1-041301-6(4) 41301-41301, Mar, 2017 Peer-reviewed
Impact of native oxide growth on the capacitance-voltage characteristic of pseudo-MOS structure

Isao Yarita, Shingo Sato, Yasuhisa Omura

ECS Transactions, 77(11) 1887-1892, 2017
Proposal of Physics-Based Equivalent Circuit of Pseudo-MOS Capacitor Structure for Impedance Spectroscopy

Isao Yarita, Shingo Sato, Yasuhisa Omura

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 4(4) 169-173, Jul, 2016
A Possible Threshold Voltage Definition of Lateral Tunnel FET

Yoshiaki Mori, Shingo Sato, Yasuhisa Omura, Abhijit Mallik

2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 188-189, 2016 Peer-reviewed
Capacitance Analysis of Pseudo-MOSFET Using Cole-Cole Plots

Isao Yarita, Shingo Sato, Yasuhisa Omura

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 36-37, 2016 Peer-reviewed
Possible theoretical models for carrier diffusion coefficient of one-dimensional Si wire devices

Shingo Sato, Yasuhisa Omura

JAPANESE JOURNAL OF APPLIED PHYSICS, 54(5), May, 2015
Circuit Architecture and Measurement Technique to Reduce the Leakage Current Stemming from Peripheral Circuits with an Array Structure in Examining the Resistive Element

Shingo Sato, Takaki Ito, Yasuhisa Omura

PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS 2015), 14-17, 2015 Peer-reviewed
Physics-based Model for the Conductive Filament at the Low Resistance State of Thin SiO2 Films

Rintaro Yamaguchi, Shingo Sato, Yasuhisa Omura

2015 SILICON NANOELECTRONICS WORKSHOP (SNW), 2015 Peer-reviewed

Misc.

Optimization of Lateral Diffusion of Source and Drain for Sub-100-nm Channel Silicon-on-insulator MOSFETs

KAWAMOTO Akihiro, SATO Shingo, OMURA Yasuhisa

Technical report of IEICE. VLD, 102(344) 13-18, Sep 23, 2002

Presentations

Influence of Electrode Materials and their Deposition Method on Switching Characteristics of ReRAM Devices

S.Watanabe, S. Kawata, T. Taniyama, P. Wiśniewski, Y. Omura, S. Sato

Nov, 2023
The spds*p*+Δ tight binding model for 3C-SiC

S. Kanai, T. Nishikawa, S. Sato

Nov, 2023
Detailed analysis of electrical components on a layered wafer with an ac pseudo-MOS method,

Y. Yuan, S. Sato

May, 2023
Detailed analysis of electrical components on SOI wafer with an ac pseudo-MOS method,

Y. Yuan, S. Sato

Nov, 2022
The impact of Carrier Lifetime on the Electrical Characteristics of Z2-FET

S. Kim, S. Sato

Nov, 2022
The influence of the process parameters on the quality of SiO2 film for the swithing operation of ReRAM devices

T. Taniyama, S. Sato

Nov, 2022
Modeling the propagation of ac signal on the channel of the pseudo-MOS method

SATO,Shingo

Sep, 2021
Revisiting an influence of island edge on electrical characteristic of pseudo-MOSFET method

MORI,Daigo, SATO,Shingo

Aug 31, 2020
The Impact of Doping Concentration on the Electrical Characteristics of Z2-FET

YABUUCHI, Yu, SATO,Shingo, OMURA, Yasuhisa

Poster papers of The 2019 International Meeting for Future of Dlectron Devices, Kansai,, Nov, 2019
Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications

KH Lee, H El Dirani, P Fonteneau, M Bawedin, S Sato, S Cristoloveanu

2018 48th European Solid-State Device Research Conference (ESSDERC), Sep, 2018
Aspects and Reduction of Miller Capacitance of Lateral Tunnel FETs

Y. Jiang, S. Sato, Y. Omura, A. Mallik

IEEE IMFEDK (Kyoto, 2018), Jun, 2018
Detailed analysis of frequency-dependent impedance in pseudo-MOSFET on thin SOI film

S. Sato, G. Ghibaudo, L. Benea, Y. Omura, S. Cristoloveanu

Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar, 2018
Measuring impact of light on resistance of non-doped ZnO films

N. Takahashi, S. Sato, Y. Omura, T. Saitoh

Advanced NanoMaterials Conf., <Nanosmat Society> (Aveiro, Portugal, 2018), 2018
Theoretical Models for Low-Frequency Noise Behaviors of Buried-Channel MOSFETs

Y. Omura, S. Sato

Proc. IEEE S3S Conference 2017 (Oct., San Francisco), Oct, 2017
Important Roles of Hole Injection and Inclusion of Sub-oxide and Metallic Si Atoms on Resistive Transition of Sputter-Deposited Silicon Oxide Films

Y. Omura, R. Yamaguchi, S. Sato

Proceedings of Nano S & T 2017, Oct, 2017
<Invited>Theoretical Models for Electron Diffusion Coefficient of One-Dimensional Si Wire Devices: impacts of conduction band non-parabolicity-

Y. Omura, S. Sato

Proceedings of Nano S & T 2017, Oct, 2017
Physical Mechanisms of Short-Channel Effects of Lateral Double-Gate Tunnel FET

Y. Mori, S. Sato, Y. Omura, A. Mallik

Proceedings of Nano S & T 2017, Oct, 2017
Definite Influence of Substrate-contact Condition on SOI Substrate Impedance Parameters

I. Yarita, S. Sato, Y. Omura

Proc. IEEE S3S Conference 2017 (Oct., San Francisco), Oct, 2017
Impact of Crystal Orientation and Conduction Band Non-parabolicity on Diffusion Constant of Nano-scale Si Rectangular Wires - theoretical estimation

Y. Omura, S. Sato

12th Nanosmat Conf. (Paris, Sept., 2017), Sep, 2017
Pseudo-MOS構造のC-V特性に及ぼす自然酸化膜の影響

鑓田勲, 佐藤伸吾, 大村泰久

第78回応用物理学会秋季学術講演会講演予稿集（2017 博多国際会議場）, Sep, 2017

Professional Memberships

Research Projects

積層半導体基板におけるキャリア輸送特性の高精度抽出法に関する研究

科学研究費助成事業, 基盤研究(C), 日本学術振興会, Apr, 2021 - Mar, 2024

佐藤伸吾
積層半導体基板向け電気物性値抽出手法の開発

公益財団法人京都技術科学センタ－, Apr, 2019 - Mar, 2020

佐藤伸吾
半導体製造における配線劣化現象解明の研究

研究調査助成, 公益財団法人電気通信普及財団, Apr, 2018 - Mar, 2020

佐藤伸吾

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