2018年5月
Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching
physica status solidi (b)
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- 巻
- 255
- 号
- 5
- 開始ページ
- 1700387-1
- 終了ページ
- 1700387-7
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1002/pssb.201700387
- 出版者・発行元
- WILEY-V C H VERLAG GMBH
A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching, high-density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method, before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side-walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7x10(7)cm(-2). This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.
- リンク情報
- ID情報
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- DOI : 10.1002/pssb.201700387
- ISSN : 0370-1972
- eISSN : 1521-3951
- Web of Science ID : WOS:000432028400009