2005年5月
n型シリコン上へのマスクレス銅パターン形成
表面技術(The Journal of the Surface Finishing Society of Japan)
- ,
- ,
- 巻
- 56
- 号
- 5
- 開始ページ
- 281
- 終了ページ
- 285
- 記述言語
- 日本語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.4139/sfj.56.281
- 出版者・発行元
- The Surface Finishing Society of Japan
We reported laser-assisted maskless metal patterning on p-type silicon previously. The process uses photo-excited electrons, and therefore it is applicable only to p-type silicon, because the n-type has abundant free electrons, and selective metal deposition cannot be expected. In the present work, we studied the possibility of achieving the metal patterning on n-type silicon. Various noble metals can be deposited on silicon by immersion plating. In the immersion plating of copper, deposition is observed on a porous silicon surface, but not on a flat silicon surface. Porous silicon is formed by silicon anodization. The reaction requires holes, and n-type silicon lacks enough holes to promote the dissolution reaction. When the surface is locally illuminated by a laser, the photo-excited area can be locally anodized, and a porous silicon pattern can be formed in n-type silicon without a mask. Using the above, copper deposition dependent upon the surface state and porous silicon patterning on the surface, we succeeded in patterning copper on n-type silicon without using a mask.<br>
- リンク情報
- ID情報
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- DOI : 10.4139/sfj.56.281
- ISSN : 0915-1869
- CiNii Articles ID : 10015665642
- CiNii Books ID : AN1005202X