2007年5月
Macropore growth in a prepatterned p-type silicon wafer
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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- 巻
- 204
- 号
- 5
- 開始ページ
- 1321
- 終了ページ
- 1326
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1002/pssa.200674325
- 出版者・発行元
- WILEY-V C H VERLAG GMBH
The formation process of ordered macropores in a prepatterned p-type silicon wafer was investigated. FE-SEM observation focusing on the early stage of the pore growth clarified the two-step process of macropore formation, whose first step was isotropic pore expansion from prepared etch pits and the second was anisotropic growth in the depth direction. Investigation using different etch-pit patterns revealed that ordered macropores with constant diameters wen, obtained when the spacing of etch pits was 3-8 mu m, while the spacing of 2 mu m resulted in the pore-wall collapse. The diameter and the wall thickness of macropores showed a tendency to decrease with decreasing the spacing of prepared etch pits, which could not be explained only from the width of the space-charge region. The resistance distribution in a silicon substrate was proposed as a parameter playing a crucial role in determination of the wall thickness. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- リンク情報
- ID情報
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- DOI : 10.1002/pssa.200674325
- ISSN : 0031-8965
- J-Global ID : 200902227917105517
- Web of Science ID : WOS:000246642300017