論文

査読有り
2009年3月1日

Filling of mesoporous silicon with copper by electrodeposition from an aqueous solution

Electrochimica Acta
  • Kazuhiro Fukami
  • ,
  • Yuki Tanaka
  • ,
  • Mohamed L. Chourou
  • ,
  • Tetsuo Sakka
  • ,
  • Yukio H. Ogata

54
8
開始ページ
2197
終了ページ
2202
記述言語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.electacta.2008.10.024

Copper filling into mesopores formed in highly doped p-type silicon was investigated. When the copper electrodeposition was carried out at a very small constant current density (-6.4 μA cm-2), the mesopores with 4 μm depth were filled with copper continuously from the bottom to the opening. When the electrodeposition current was set at an absolute value twice as large as in the above condition, the isolated particles were electrodeposited in the mesopores. The depth also affected the filling behavior. The pores with 8 μm in depth were not continuously filled with copper even in the condition at which the pores of 4 μm in length were completely filled. Electrodeposition behavior in mesopores was also simulated using a simple model. The numerical simulation suggested that the diffusion-limited electrodeposition could be achieved in mesopores at a very small current, at which the diffusion-limited condition had never been realized on a planar electrode. © 2008 Elsevier Ltd. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/j.electacta.2008.10.024
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000264303100008&DestApp=WOS_CPL
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=59849093789&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=59849093789&origin=inward
ID情報
  • DOI : 10.1016/j.electacta.2008.10.024
  • ISSN : 0013-4686
  • SCOPUS ID : 59849093789
  • Web of Science ID : WOS:000264303100008

エクスポート
BibTeX RIS