2008年3月
A heterojunction photodiode operating at inorganic nanosheet interfaces
APPLIED PHYSICS EXPRESS
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- 巻
- 1
- 号
- 3
- 開始ページ
- 0350011
- 終了ページ
- 0350013
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/APEX.1.035001
- 出版者・発行元
- JAPAN SOC APPLIED PHYSICS
A heterojunction photodiode was fabricated by forming two contact regions on a glass substrate: one side was a cast film of perovskite-type niobate [(CH(3))(3)NHSr(2)Nb(3)O(10)] as a n-type photosemiconductor and the other side a cast film of Zn-saponite (Na(0.96)[Si(7.18)Al(0.64)]Zn(6.20)O(20)-(OH)(2)) as a p-type semiconductor under oxygen atmosphere. Diode-type current-voltage characteristics were obtained under the illumination of light (340 nm) and oxygen atmosphere (1 atm) at 25-100 degrees C. The interfacial structure was studied by means of focused ion-beam and transmission electron microscopy techniques, confirming the contact of the two different nanosheets on a nanometer scale. The results are discussed on the basis of the nanosheet band structures. (C) 2008 The Japan Society of Applied Physics.
- リンク情報
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- DOI
- https://doi.org/10.1143/APEX.1.035001
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000255453000019&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=57049166035&origin=inward
- ID情報
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- DOI : 10.1143/APEX.1.035001
- ISSN : 1882-0778
- SCOPUS ID : 57049166035
- Web of Science ID : WOS:000255453000019