MISC

2016年9月

Characteristics of non-irradiated and irradiated double SOI integration type pixel sensor

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  • M. Asano
  • ,
  • D. Sekigawa
  • ,
  • K. Hara
  • ,
  • W. Aoyagi
  • ,
  • S. Honda
  • ,
  • N. Tobita
  • ,
  • Y. Arai
  • ,
  • T. Miyoshi
  • ,
  • I. Kurachi
  • ,
  • T. Tsuboyama
  • ,
  • M. Yamada

831
開始ページ
315
終了ページ
321
記述言語
英語
掲載種別
機関テクニカルレポート,技術報告書,プレプリント等
DOI
10.1016/j.nima.2016.03.095
出版者・発行元
ELSEVIER SCIENCE BV

We are developing monolithic pixel sensors based on a 0.2 pm fully depleted silicon-on-insulator (FD S01) technology for high-energy physics experiment applications. With this SOI technology, the wafer resistivities for the electronics and sensor parts can be chosen separately. Therefore, a device with full depletion and fast charge collection is realized. The total ionizing dose (TID) effect is the major challenge for application in hard radiation environments. To compensate for TID damage, we introduced a double SOI structure that implements an additional middle silicon layer (S012 layer). Applying a negative voltage to the 5012 layer should compensate for the effects induced by holes trapped in the buried oxide layers. We studied the recovery from TID damage induced by 'Co y and other characteristics of the integration type double SOI sensor INTPIXh2. When the double SOI sensor was irradiated to 100 kGy, it showed a response to the infrared laser similar to that of a non -irradiated sensor when we applied a negative voltage to the 5012 layer. Thus, we concluded that the double SOI sensor is very effective at sufficiently enhancing the radiation hardness for application in experiments with harsh radiation environments, such as at Belle II or ILC. (C) 2016 Elsevier B.V. All rights reserved.

Web of Science ® 被引用回数 : 8

リンク情報
DOI
https://doi.org/10.1016/j.nima.2016.03.095
arXiv
http://arxiv.org/abs/arXiv:1507.05382
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000382255800056&DestApp=WOS_CPL
URL
http://arxiv.org/abs/1507.05382v1
ID情報
  • DOI : 10.1016/j.nima.2016.03.095
  • ISSN : 0168-9002
  • eISSN : 1872-9576
  • arXiv ID : arXiv:1507.05382
  • Web of Science ID : WOS:000382255800056

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