MISC

2015年7月25日

TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices

  • Shunsuke Honda
  • ,
  • Kazuhiko Hara
  • ,
  • Daisuke Sekigawa
  • ,
  • Bipin Subedi
  • ,
  • Mari Asano
  • ,
  • Naoshi Tobita
  • ,
  • Wataru Aoyagi
  • ,
  • Yasuo Arai
  • ,
  • Akimasa Ishikawa
  • ,
  • Yoshimasa Ono
  • ,
  • Itaru Ushiki
  • ,
  • SOI Collaboration

記述言語
掲載種別
機関テクニカルレポート,技術報告書,プレプリント等

We are developing double silicon-on-insulator (DSOI) pixel sensors for<br />
various applications such as for high-energy experiments. The performance of<br />
DSOI devices has been evaluated including total ionization damage (TID) effect<br />
compensation in transistors using a test-element-group (TEG) up to 2 MGy and in<br />
integration-type sensors up to 100 kGy. In this article, successful TID<br />
compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the<br />
application of DSOI to counting-type sensors. The cross-talk suppression in<br />
DSOI is being evaluated. These results encourage us that DSOI sensors are<br />
applicable to future high-energy experiments such as the BELLE-II experiment or<br />
the ILC experiment.

リンク情報
arXiv
http://arxiv.org/abs/arXiv:1507.07035
URL
http://arxiv.org/abs/1507.07035v1
ID情報
  • arXiv ID : arXiv:1507.07035

エクスポート
BibTeX RIS