We are developing double silicon-on-insulator (DSOI) pixel sensors for<br />
various applications such as for high-energy experiments. The performance of<br />
DSOI devices has been evaluated including total ionization damage (TID) effect<br />
compensation in transistors using a test-element-group (TEG) up to 2 MGy and in<br />
integration-type sensors up to 100 kGy. In this article, successful TID<br />
compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the<br />
application of DSOI to counting-type sensors. The cross-talk suppression in<br />
DSOI is being evaluated. These results encourage us that DSOI sensors are<br />
applicable to future high-energy experiments such as the BELLE-II experiment or<br />
the ILC experiment.