論文

査読有り
2016年7月

Advanced monolithic pixel sensors using SOI technology

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  • Toshinobu Miyoshi
  • ,
  • Yasuo Arai
  • ,
  • Mari Asano
  • ,
  • Yowichi Fujita
  • ,
  • Ryutaro Hamasaki
  • ,
  • Kazuhiko Hara
  • ,
  • Shunsuke Honda
  • ,
  • Yoichi Ikegami
  • ,
  • Ikuo Kurachi
  • ,
  • Shingo Mitsui
  • ,
  • Ryutaro Nishimura
  • ,
  • Kazuya Tauchi
  • ,
  • Naoshi Tobita
  • ,
  • Toru Tsuboyama
  • ,
  • Miho Yamada

824
開始ページ
439
終了ページ
442
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.nima.2015.11.109
出版者・発行元
ELSEVIER SCIENCE BV

We are developing advanced pixel sensors using silicon-on-insulator (SOl) technology. A SOl wafer is used; top silicon is used for electric circuit and bottom silicon is used as a sensor. Target applications are high-energy physics, X-ray astronomy, material science, non-destructive inspection, medical application and so on. We have developed two integration-type pixel sensors, FPIXb and INTPIX7. These sensors were processed on single SOI wafers with various substrates in n- or p-type and double SOI wafers. The development status of double SOI sensors and some up-to-date test results of n-type and p-type SOI sensors are shown. (C) 2015 Elsevier B.V. All rights reserved.

Web of Science ® 被引用回数 : 7

リンク情報
DOI
https://doi.org/10.1016/j.nima.2015.11.109
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000375408700152&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.nima.2015.11.109
  • ISSN : 0168-9002
  • eISSN : 1872-9576
  • Web of Science ID : WOS:000375408700152

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