論文

査読有り
2013年

Monolithic pixel detectors with 0.2 μm FD-SOI pixel process technology

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • Toshinobu Miyoshi
  • ,
  • Yasuo Arai
  • ,
  • Tadashi Chiba
  • ,
  • Yowichi Fujita
  • ,
  • Kazuhiko Hara
  • ,
  • Shunsuke Honda
  • ,
  • Yasushi Igarashi
  • ,
  • Yoichi Ikegami
  • ,
  • Yukiko Ikemoto
  • ,
  • Takashi Kohriki
  • ,
  • Morifumi Ohno
  • ,
  • Yoshimasa Ono
  • ,
  • Naoyuki Shinoda
  • ,
  • Ayaki Takeda
  • ,
  • Kazuya Tauchi
  • ,
  • Toru Tsuboyama
  • ,
  • Hirofumi Tadokoro
  • ,
  • Yoshinobu Unno
  • ,
  • Masashi Yanagihara

732
開始ページ
530
終了ページ
534
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.nima.2013.06.029

Truly monolithic pixel detectors were fabricated with 0.2μm SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on a thin SOI layer and connected to diodes formed in the silicon handle wafer through the buried oxide layer. We can choose the handle wafer and therefore high-resistivity silicon is also available. Double SOI (D-SOI) wafers fabricated from Czochralski (CZ)-SOI wafers were newly obtained and successfully processed in 2012. The top SOI layers are used as electric circuits and the middle SOI layers used as a shield layer against the back-gate effect and cross-talk between sensors and CMOS circuits, and as an electrode to compensate for the total ionizing dose (TID) effect. In 2012, we developed two SOI detectors, INTPIX5 and INTPIX3g. A spatial resolution study was done with INTPIX5 and it showed excellent performance. The TID effect study with D-SOI INTPIX3g detectors was done and we confirmed improvement of TID tolerance in D-SOI sensors. © 2013 Elsevier B.V.

Web of Science ® 被引用回数 : 25

リンク情報
DOI
https://doi.org/10.1016/j.nima.2013.06.029
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000327490400119&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.nima.2013.06.029
  • ISSN : 0168-9002
  • SCOPUS ID : 84889079259
  • Web of Science ID : WOS:000327490400119

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