Truly monolithic pixel detectors were fabricated with 0.2μm SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on a thin SOI layer and connected to diodes formed in the silicon handle wafer through the buried oxide layer. We can choose the handle wafer and therefore high-resistivity silicon is also available. Double SOI (D-SOI) wafers fabricated from Czochralski (CZ)-SOI wafers were newly obtained and successfully processed in 2012. The top SOI layers are used as electric circuits and the middle SOI layers used as a shield layer against the back-gate effect and cross-talk between sensors and CMOS circuits, and as an electrode to compensate for the total ionizing dose (TID) effect. In 2012, we developed two SOI detectors, INTPIX5 and INTPIX3g. A spatial resolution study was done with INTPIX5 and it showed excellent performance. The TID effect study with D-SOI INTPIX3g detectors was done and we confirmed improvement of TID tolerance in D-SOI sensors. © 2013 Elsevier B.V.
Web of Science ® 被引用回数 : 25
Web of Science ® の 関連論文(Related Records®)ビュー
- DOI : 10.1016/j.nima.2013.06.029
- ISSN : 0168-9002
- SCOPUS ID : 84889079259
- Web of Science ID : WOS:000327490400119