論文

査読有り
2013年

Total Ionization Damage Effects in Double Silicon-on-Insulator Devices

2013 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC)
  • S. Honda
  • ,
  • K. Hara
  • ,
  • M. Asano
  • ,
  • T. Maeda
  • ,
  • N. Tobita
  • ,
  • Y. Arai
  • ,
  • T. Miyoshi
  • ,
  • M. Ohno
  • ,
  • T. Hatsui
  • ,
  • T. Tsuru
  • ,
  • N. Miura
  • ,
  • H. Kasai
  • ,
  • M. Okihara

記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
出版者・発行元
IEEE

We are developing monolithic pixel sensors based on a 0.2 mu m fully-depleted silicon-on-Insulator (SOI) technology. The major issue in applications them in high-radiation environments is the total ionization damage (TID) effects. The effects are rather substantial in the SOI devices since the transistors are enclosed in the oxide layers where generated holes are trapped and affect the operation of the near-by transistors. The double SOI sensors that provide an independent electrode underneath the buried oxide layer have been developed. We have irradiated transistor test elements and pixel sensors with gamma-rays. By adjusting the potential of this electrode, the TID effects are shown to be compensated. The pixel sensor irradiated to 20 kGy recovered its functionality by applying a bias to the electrode. The radiation tolerance of the SOI devices has been substantially improved by the double SOI.

Web of Science ® 被引用回数 : 5

リンク情報
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000347163502120&DestApp=WOS_CPL
ID情報
  • ISSN : 1082-3654
  • Web of Science ID : WOS:000347163502120

エクスポート
BibTeX RIS