High-k thin films of ZrO2, PrOx of similar to10 nm thickness have been prepared by pulsed laser deposition, and characterized in microscopic structure and electrical properties. Crystallization is promoted in ZrO2 films deposited above 400 degreesC, but a significant XRD peak was not observed in the ZrO2 film grown below 400 degreesC. The leakage current is decreased by increasing growth temperature, but all equivalent-oxide thickness (EOT) obtained from accumulation capacitance of C-V characteristics becomes large. The films deposited at 400 degreesC were annealed at 400 degreesC in O-2 gas to reduce the leakage. The leakage current change to be small, but the EOTs become large. Oxygen radical annealing is carried out to reduced the leakage, and is effective for ZrO2 thin film. Oil the other hand. only small improvement is observed ill the PrOx films.