Mitsuru Sometani

Profile Information

Affiliation: National Institute of Advanced Industrial Science and Technology
: Osaka University

Researcher number: 60783644
ORCID ID: https://orcid.org/0000-0002-8208-8469
J-GLOBAL ID: 202001018659741108
researchmap Member ID: R000011004

Research Interests

Research Areas

Nanotechnology/Materials / Thin-film surfaces and interfaces /
Nanotechnology/Materials / Crystal engineering /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

Research History

Aug, 2021 - Present

Osaka University
Apr, 2021 - Present

主任研究員, 先進パワーエレクトロニクス研究センター, 国立研究開発法人産業技術総合研究所
Apr, 2016 - Mar, 2021

研究員, 先進パワーエレクトロニクス研究センター, 国立研究開発法人産業技術総合研究所
Apr, 2011 - Mar, 2016

富士電機株式会社

Education

- Mar, 2011

Graduate School of Pure and Applied Sciences, University of Tsukuba

Committee Memberships

Oct, 2022 - Present

プログラム委員, 応用物理学会 2023 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF 2023)
Apr, 2021 - Present

企画委員会企画幹事, ワイドギャップ半導体学会
Jan, 2021 - Dec, 2021

2021年国際固体素子・材料コンファレンス(SSDM2021) プログラム委員, 応用物理学会
Nov, 2020 - Nov, 2021

2021 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF 2021) プログラム委員総務, 応用物理学会
Jan, 2020 - Mar, 2021

ワイドキャップ半導体光・電子デバイス第162委員会企画委員, 産学協力研究委員会
Jan, 2020 - Dec, 2020

2020年国際固体素子・材料コンファレンス(SSDM2020) プログラム委員, 応用物理学会
Jan, 2018 - Dec, 2019

2019年国際固体素子・材料コンファレンス(SSDM2019) プログラム委員, 応用物理学会
Jan, 2016 - Dec, 2016

第３回講演会実行委員, 応用物理学会先進パワー半導体分科会

Awards

Sep, 2014

応用物理学会講演奨励賞, ゲートバイアスストレスによるしきい値電圧変動の緩和挙動と新規測定法の提案, 公益社団法人応用物理学会

染谷満・産総研先進パワエレ

Papers

Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation

Hiroki Fujimoto, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express, 15(10) 104004-104004, Oct 1, 2022
Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors

Takuji Hosoi, Momoe Ohsako, Kidist Moges, Koji Ito, Tsunenobu Kimoto, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express, Jun 1, 2022 Peer-reviewed
Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces

Takato Nakanuma, Yu Iwakata, Arisa Watanabe, Takuji Hosoi, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics, 61({SC}) SC1065-SC1065, May 1, 2022 Peer-reviewed
Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs

Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, Shinsuke Harada

Journal of Applied Physics, 131(14) 145701-145701, Apr 14, 2022 Peer-reviewed
Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices

Takato Nakanuma, Takuma Kobayashi, Takuji Hosoi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express, 15(4) 041002-041002, Apr 1, 2022 Peer-reviewed
Investigation of reliability of NO nitrided SiC(1100) MOS devices

Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2022 IEEE International Reliability Physics Symposium (IRPS), Mar, 2022
Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Yuta Abe, Akihumi Chaen, Mitsuru Sometani, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima, Takahide Umeda

Applied Physics Letters, Feb 7, 2022 Peer-reviewed
Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method

Hiroki Sakata, Dai Okamoto, Mitsuru Sometani, Mitsuo Okamoto, Hirohisa Hirai, Shinsuke Harada, Tetsuo Hatakeyama, Hiroshi Yano, Noriyuki Iwamuro

Japanese Journal of Applied Physics, 60(6) 060901-060901, Jun 1, 2021 Peer-reviewed
Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

Shogo Sekine, Masakazu Okada, Teruaki Kumazawa, Mitsuru Sometani, Hirohisa Hirai, Naoya Serizawa, Ryu Hasunuma, Mitsuo Okamoto, Shinsuke Harada

Japanese Journal of Applied Physics, 60({SB}), May 1, 2021 Peer-reviewed
Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method

Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, Takao Inokuma, Norio Tokuda

Carbon, 168 659-664, Oct, 2020 Peer-reviewed
Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method

Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Mitsuru Sometani, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, Norio Tokuda

Applied Physics Letters, 117(9), Aug 31, 2020 Peer-reviewed
Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

Hirohisa Hirai, Tetsuo Hatakeyama, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Hajime Okumura, Hiroshi Yamaguchi

Applied Physics Letters, 117(4), Jul 27, 2020 Peer-reviewed
Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

Hironori Takeda, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Hiroshi Yano, Heiji Watanabe

Materials Science Forum, 1004 620-626, Jul, 2020
Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces

E. Higa, M. Sometani, H. Hirai, H. Yano, S. Harada, T. Umeda

Applied Physics Letters, Apr 27, 2020 Peer-reviewed
Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces

T. Umeda, Y. Nakano, E. Higa, T. Okuda, T. Kimoto, T. Hosoi, H. Watanabe, M. Sometani, S. Harada

Journal of Applied Physics, 127(14) 145301-145301, Apr 14, 2020 Peer-reviewed
Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs

Hiroki Nemoto, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano

JAPANESE JOURNAL OF APPLIED PHYSICS, 59(4), Apr, 2020 Peer-reviewed
Low V F 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates

Akihiro Koyama, Mitsuru Sometani, Kensuke Takenaka, Koji Nakayama, Akira Miyasaka, Kazutoshi Kojima, Kazuma Eto, Tomohisa Kato, Junji Senzaki, Yoshiyuki Yonezawa

Japanese Journal of Applied Physics, Apr 1, 2020 Peer-reviewed
Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface

T. Umeda, T. Kobayashi, M. Sometani, H. Yano, Y. Matsushita, S. Harada

Applied Physics Letters, 116(7), Feb 18, 2020 Peer-reviewed
Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000 1 ¯)/SiO2 interfaces with wet oxidation

T. Umeda, Y. Kagoyama, K. Tomita, Y. Abe, M. Sometani, M. Okamoto, S. Harada, T. Hatakeyama

Applied Physics Letters, 115(15) 151602-151602, Oct 7, 2019 Peer-reviewed
Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 1 1 ¯ 00 m-face and 11 2 ¯ 0 a-face characterized by Hall effect measurements

Hirohisa Hirai, Tetsuo Hatakeyama, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Hajime Okumura

Applied Physics Letters, 115(13), Sep 23, 2019 Peer-reviewed

Books and Other Publications

次世代パワーエレクトロニクスの課題と評価技術

(Role: Contributor, SiC-MOSデバイスのしきい値電圧変動とその評価技術)

S&T出版, Jul, 2022 (ISBN: 9784907002930)
SiCパワーMOSFETに残された課題

染谷満 (Role: Contributor, SiC-MOSのしきい値電圧変動とその評価法の課題)

公益社団法人応用物理先進パワー半導体分科会, Sep, 2017 (ISBN: 9784863486393)
SiC酸化膜界面のパッシベーション技術

染谷満 (Role: Contributor, しきい値電圧変動に対するSiC-MOS界面窒化の効果とその評価方法)

公益社団法人応用物理先進パワー半導体分科会, Aug, 2016 (ISBN: 9784863485846)

Presentations

Energy levels of carbon dangling-bond at 4H-SiC(0001)/SiO2 interface

Dec 21, 2022
Impact of oxidation process on electron scattering and roughness at 4H-SiC non-polar MOS interfaces

M. Sometani, H. Hirai, M. Okamoto, T. Hatakeyama, S. Harada

The 19th International Conference on Silicon Carbide and Related Materials 2022, Sep 13, 2022
Comparative Study of Performance of SiC SJ-MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth

Mitsuru Sometani, Kunihide Oozono, Shiyang Ji, Tadao Morimoto, Tomohisa Kato, Kazutoshi Kojima, Shinsuke Harada

IEEE ISPSD 2022, May 25, 2022
Impact of Oxidation process on electron scattering at 4H-SiC non-polar MOS Interfaces

Dec, 2021
Comparison of Field Effect Mobility Enhancement by Different Oxidation Processes at 4H-SiC a-face MOS Interface

M. Sometani, H. Hirai, M. Okamoto, T. Hatakeyama, S. Harada, H. Okumura, H. Yamaguchi

2020 International Conference on Solid State Devices and Materials, Sep, 2020
SiC-MOS界面特有の散乱による異常な移動度劣化

染谷満, 細井卓治, 平井悠久, 岡本光央, 畠山哲夫, 矢野裕司, 渡部平司, 原田信介

応用物理学会先進パワー半導体分科会第2回個別討論会, Sep, 2020 Invited
Wet酸化プロセスによる4H-SiC a面MOS界面の散乱低減

染谷満, 平井悠久, 岡本光央, 畠山哲夫, 原田信介, 奥村元

先進パワー半導体分科会第6回講演, Dec, 2019
超低実効pエピ基板を用いて評価した4H-SiC(0001)MOSFETの反転チャネル電子の散乱要因

染谷満, 細井卓治, 平井悠久, 畠山哲夫, 原田信介, 矢野裕司, 志村考功, 渡部平司, 米澤喜幸, 奥村元

先進パワー半導体分科会第5回講演会, Nov, 2018
低不純物濃度4H-SiC(0001)基板上に作製したMOSFETのホール効果移動度に対するNO-POAの影響

染谷満, 細井卓治, 畠山哲夫, 原田信介, 矢野裕司, 志村考功, 渡部平司, 米澤喜幸, 奥村元

第79回応用物理学会秋季学術講演会, Sep, 2018
Superiority of pure O2-based gate oxidation on Hall effect mobility of 4H-SiC (0001) MOSFET revealed by low-doped epitaxial wafers

M. Sometani, T. Hosoi, T. Hatakeyama, S. Harada, H. Yano, T. Shimura, H. Watanabe, Y. Yonezawa, H. Okumura

2018 European Conference on Silicon Carbide & related Materials, Sep, 2018
Improved Channel Mobility of 4H-SiC N-MOSFETs by Ultrahigh-Temperature Oxidation with Low-Oxygen Partial-Pressure Cooling Procedure

M. Sometani, Y. Katsu, D. Nagai, H. Tsuji, T. Hosoi, T. Shimura, Y. Yonezawa, H. Watanabe

2017 IEEE Semiconductor Interface Specialists Conference, Dec, 2017
SiC-MOSのしきい値電圧変動とその評価法の課題

染谷満

先進パワー半導体分科会第8回研究会, Sep, 2017 Invited
Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices under Various Gate Bias Condition

Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Yohei Iwahashi, Mariko Hayashi, Dai Okamoto, Hiroshi Yano, Shinsuke Harada, Yoshiyuki Yonezawa, Hajime Okumura

2017 International Conference on Solid State Devices and Materials, Sep, 2017 Invited
Evaluation of Drain Current by AC Gate Bias Stress in Commercially Available SiC MOSFETs

M Sometani, Y Iwahashi, Y Yano, S Harada, Y Yonezawa, H Okumura

29th Inter.national Symposium on Power Semiconductor Devices and ICs, May, 2017
超高温酸化と水冷プロセスによるSiC-MOS界面の特性改善

染谷満, 永井大介, 勝義仁, 細井卓治, 志村考功, 武井学, 米澤善幸, 渡部平司

先進パワー半導体分科会第3回講演会, Nov, 2016
Impact of Rapid Cooling Process in Ultra-high-temperature Oxidation of 4H-SiC(0001)

Mitsuru Sometani, Daisuke Nagai, Takuji Hosoi, Takayoshi Shimura, Yoshiyuki Yonezawa, Manabu Takei, Heiji Watanabe

2016 International Conference on Solid State Devices and Materials, Sep, 2016
しきい値電圧変動に対するSiC-MOS界面窒化の効果とその評価方法

染谷満

応用物理学会先進パワー半導体分科会第2回個別討論会, Aug, 2016 Invited
超高温酸化と急速冷却によるSiC-MOS界面特性改善

染谷満, 永井大介, 細井卓治, 志村考功, 渡部平司

2016年第63回応用物理学会春季学術講演, Mar, 2016
低温High-Low CV法による界面準位密度の測定と移動度との相関

染谷満, 岡本大, 原田信介, 石森均, 高須伸次, 畠山哲夫, 武井学, 米澤喜幸, 福田憲司, 奥村元

先進パワー半導体分科会第１回講演会, Nov, 2014
N2O酸化により形成した4H-SiC (0001) MOSFETに対する緩和無しVth変動評価

染谷満, 岡本大, 原田信介, 石森均, 高須伸次, 畠山哲夫, 武井学, 児島一聡, 米澤喜幸, 福田憲司, 奥村元

第75回応用物理学会秋季学術講演会, Sep, 2014 Invited

Professional Memberships

Apr, 2021 - Present

The Japan Society of Wide Gap Semiconductors
2006 - Present

応用物理学会

Research Projects

ワイドギャップ半導体MOS界面欠陥の正体の横断的解明

科学研究費助成事業基盤研究(A), 日本学術振興会, Apr, 2020 - Mar, 2025

藤ノ木享英, 牧野俊晴, 原田信介, 五十嵐信行, 磯谷順一, 染谷満, 松下雄一郎
SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減

科学研究費助成事業基盤研究(C), 日本学術振興会, Apr, 2021 - Mar, 2024

染谷満

Industrial Property Rights

特願2017-037034 半導体装置及び半導体装置の製造方法

渡部平司, 志村考功, 細井卓治, 辻英徳, 寺尾豊, 染谷満
特願2016-040129 半導体装置の製造方法及びこれに用いる半導体製造装置

渡部平司, 志村考功, 細井卓治, 染谷満
特願2016-053685 炭化珪素半導体装置の製造方法

渡部平司, 志村考功, 細井卓治, 染谷満
特許6292667 半導体装置の評価方法および半導体装置の評価装置

染谷満, 武井学, 原田信介

Profile Information

Research Interests

Research Areas

Research History

Education

Committee Memberships

Awards

Papers

Books and Other Publications

Presentations

Professional Memberships

Research Projects

Industrial Property Rights

Menu

Coauthors