2022年4月1日
Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices
Applied Physics Express
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 15
- 号
- 4
- 開始ページ
- 041002
- 終了ページ
- 041002
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.35848/1882-0786/ac5ace
- 出版者・発行元
- {IOP} Publishing
Abstract
The leakage current and flat-band voltage (VFB) instability of NO-nitrided SiC(11$\bar{2}$0) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties, we found that it reduces the onset field of Fowler–Nordheim current by about 1 MV cm−1, leading to pronounced leakage current. Synchrotron radiation X-ray photoelectron spectroscopy revealed that the nitridation reduces the conduction band offset at the SiO2/SiC interface, corroborating the above finding. Furthermore, systematical positive and negative bias stress tests clearly indicated the enhancement of VFB instability of nitrided a-face MOS devices against electron and hole injection.
The leakage current and flat-band voltage (VFB) instability of NO-nitrided SiC(11$\bar{2}$0) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties, we found that it reduces the onset field of Fowler–Nordheim current by about 1 MV cm−1, leading to pronounced leakage current. Synchrotron radiation X-ray photoelectron spectroscopy revealed that the nitridation reduces the conduction band offset at the SiO2/SiC interface, corroborating the above finding. Furthermore, systematical positive and negative bias stress tests clearly indicated the enhancement of VFB instability of nitrided a-face MOS devices against electron and hole injection.
- リンク情報
- ID情報
-
- DOI : 10.35848/1882-0786/ac5ace
- ISSN : 1882-0778
- eISSN : 1882-0786
- ORCIDのPut Code : 109937444