2022年10月1日
Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation
Applied Physics Express
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- 巻
- 15
- 号
- 10
- 開始ページ
- 104004
- 終了ページ
- 104004
- 記述言語
- 掲載種別
- 研究論文（学術雑誌）
- DOI
- 10.35848/1882-0786/ac926c
- 出版者・発行元
- IOP Publishing
Abstract
The impact of excimer ultraviolet (UV) light irradiation on SiO2/SiC(0001) and (112̄0) interfaces was examined to get insight into the effect of NO nitridation. While NO nitridation appears to be effective in passivating the electron traps at the SiO2/SiC interfaces, we found that the nitridation induces additional traps that are not active until UV light is irradiated. The traps include those causing hysteresis and frequency dispersion in the C–V characteristics and those affecting the long-term reliability of MOS devices. A non-nitrided SiO2/SiC interface was less sensitive to UV light, indicating the instability of the nitrided SiC MOS structure.
The impact of excimer ultraviolet (UV) light irradiation on SiO2/SiC(0001) and (112̄0) interfaces was examined to get insight into the effect of NO nitridation. While NO nitridation appears to be effective in passivating the electron traps at the SiO2/SiC interfaces, we found that the nitridation induces additional traps that are not active until UV light is irradiated. The traps include those causing hysteresis and frequency dispersion in the C–V characteristics and those affecting the long-term reliability of MOS devices. A non-nitrided SiO2/SiC interface was less sensitive to UV light, indicating the instability of the nitrided SiC MOS structure.
- リンク情報
- ID情報
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- DOI : 10.35848/1882-0786/ac926c
- ISSN : 1882-0778
- eISSN : 1882-0786