論文

査読有り
2008年1月

An atomic resolution scanning tunneling microscope that applies external tensile stress and strain in an ultrahigh vacuum

NANOTECHNOLOGY
  • D. Fujita
  • ,
  • M. Kitahara
  • ,
  • K. Onishi
  • ,
  • K. Sagisaka

19
2
開始ページ
025705-1
終了ページ
025705-5
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1088/0957-4484/19/02/025705
出版者・発行元
IOP PUBLISHING LTD

We have developed an ultrahigh vacuum scanning tunneling microscope with an in situ external stress application capability in order to determine the effects of stress and strain on surface atomistic structures. It is necessary to understand these effects because controlling them will be a key technology that will very likely be used in future nanometer-scale fabrication processes. We used our microscope to demonstrate atomic resolution imaging under external tensile stress and strain on the surfaces of wafers of Si(111) and Si(001). We also successfully observed domain redistribution induced by applying uniaxial stress at an elevated temperature on the surface of a wafer of vicinal Si(100). We confirmed that domains for which an applied tensile stress is directed along the dimer bond become less stable and shrink. This suggests that it may be feasible to fabricate single domain surfaces in a process that controls surface stress and strain.

Web of Science ® 被引用回数 : 12

リンク情報
DOI
https://doi.org/10.1088/0957-4484/19/02/025705
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000252828900023&DestApp=WOS_CPL
ID情報
  • DOI : 10.1088/0957-4484/19/02/025705
  • ISSN : 0957-4484
  • Web of Science ID : WOS:000252828900023

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