論文

査読有り
2007年5月

Nanoscale electroluminescence from n-type GaAs(110) in tunnel junctions

NANOTECHNOLOGY
  • X. L. Guo
  • ,
  • D. Fujita
  • ,
  • N. Niori
  • ,
  • K. Sagisaka
  • ,
  • K. Onishi

18
19
開始ページ
195201-1
終了ページ
195201-4
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1088/0957-4484/18/19/195201
出版者・発行元
IOP PUBLISHING LTD

Nanoscale electroluminescence (EL) was induced from n-type GaAs( 110) in tunnel junctions using an indium tin oxide (ITO)-coated optical fibre probe at both polarities, room temperature (RT), and 80 K. The quantum efficiency of photon emission at negative bias is much higher than at positive bias at both RT and 80 K. A high quantum efficiency of about similar to 10(-4)(photons/electron) was achieved at 80 K. The well-defined optical spectra exhibit two-peak features at 1.49 and 1.39 eV which are generated by the radiative recombination of hole - electron pairs over the direct band gap and surface states, respectively.

Web of Science ® 被引用回数 : 8

リンク情報
DOI
https://doi.org/10.1088/0957-4484/18/19/195201
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000246589900006&DestApp=WOS_CPL
ID情報
  • DOI : 10.1088/0957-4484/18/19/195201
  • ISSN : 0957-4484
  • eISSN : 1361-6528
  • Web of Science ID : WOS:000246589900006

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