Nanoscale electroluminescence (EL) was induced from n-type GaAs( 110) in tunnel junctions using an indium tin oxide (ITO)-coated optical fibre probe at both polarities, room temperature (RT), and 80 K. The quantum efficiency of photon emission at negative bias is much higher than at positive bias at both RT and 80 K. A high quantum efficiency of about similar to 10(-4)(photons/electron) was achieved at 80 K. The well-defined optical spectra exhibit two-peak features at 1.49 and 1.39 eV which are generated by the radiative recombination of hole - electron pairs over the direct band gap and surface states, respectively.