2006年5月
Quasi-one-dimensional quantum well on Si(100) surface crafted by using scanning tunneling microscopy tip
APPLIED PHYSICS LETTERS
- ,
- 巻
- 88
- 号
- 20
- 開始ページ
- 203118-1
- 終了ページ
- 203118-3
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.2204762
- 出版者・発行元
- AMER INST PHYSICS
We fabricated quasi-one-dimensional (1D) quantum wells on the Si(100) surface by using a scanning tunneling microscopy (STM) tip. Electron waves were confined to a single silicon dimer row by two tungsten nanodots that were separated by several nanometers. The tungsten dots were deposited by point contact between the STM tip and the sample. The size of the dots we created on the Si(100) surface was as small as the width of a single dimer. Differential conductance mapping and scanning tunneling spectroscopy detected different quantum states confined to the quasi-1D quantum well as changing bias voltage. (c) 2006 American Institute of Physics.
Web of Science ® 被引用回数 : 13
Web of Science ® の 関連論文(Related Records®)ビュー
- リンク情報
- ID情報
-
- DOI : 10.1063/1.2204762
- ISSN : 0003-6951
- Web of Science ID : WOS:000237682100081