論文

査読有り
2006年5月

Quasi-one-dimensional quantum well on Si(100) surface crafted by using scanning tunneling microscopy tip

APPLIED PHYSICS LETTERS
  • K Sagisaka
  • ,
  • D Fujita

88
20
開始ページ
203118-1
終了ページ
203118-3
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.2204762
出版者・発行元
AMER INST PHYSICS

We fabricated quasi-one-dimensional (1D) quantum wells on the Si(100) surface by using a scanning tunneling microscopy (STM) tip. Electron waves were confined to a single silicon dimer row by two tungsten nanodots that were separated by several nanometers. The tungsten dots were deposited by point contact between the STM tip and the sample. The size of the dots we created on the Si(100) surface was as small as the width of a single dimer. Differential conductance mapping and scanning tunneling spectroscopy detected different quantum states confined to the quasi-1D quantum well as changing bias voltage. (c) 2006 American Institute of Physics.

Web of Science ® 被引用回数 : 13

リンク情報
DOI
https://doi.org/10.1063/1.2204762
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000237682100081&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/1.2204762
  • ISSN : 0003-6951
  • Web of Science ID : WOS:000237682100081

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