Tetsuo Hatakeyama

J-GLOBAL         Last updated: May 15, 2019 at 13:14
 
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Name
Tetsuo Hatakeyama
Affiliation
Toyama Prefectural University
Section
Faculty of Engineering
Job title
Professor
Degree
Ph.D.(The University of Tokyo)

Research Areas

 
 

Academic & Professional Experience

 
Apr 2018
 - 
Today
Professor, Faculty of Engineering, Department of Electric and Computer Engineering, Toyama Prefectural University
 
Apr 2016
 - 
Mar 2018
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Technology
 
Mar 1997
 - 
Mar 2016
Corporate R&D center, Toshiba Corporation
 
Apr 1991
 - 
Feb 1997
Kawasaki Steel Corporation
 

Education

 
Apr 1987
 - 
Mar 1990
Department of Physics, Doctoral Course, Graduate School of Science, The University of Tokyo
 

Published Papers

 
Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities
Tetsuo Hatakeyama, Takeyoshi Masuda, Mitsuru Sometani, Shinsuke Harada, Dai Okamoto, Hiroshi Yano, Yoshiyuki Yonezawa, Hajime Okumura
Applied Physics Express   12(2) 021003   Mar 2019   [Refereed]
Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2/SiC (0-33-8) interfaces
Takeyoshi Masuda, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano
Jpn. J. Appl. Phys.   58 SBBD04   Mar 2019   [Refereed]
Eigo Fujita, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
AIP Advances   8(8) 085305   2018   [Refereed]
Zhang X, Okamoto D, Hatakeyama T, Sometani M, Harada S, Iwamuro N, Yano H.
Japanese Journal of Applied Physics   57(6)    2018   [Refereed]
Hayashi M, Sometani M, Hatakeyama T, Yano H, Harada S.
Japanese Journal of Applied Physics   57(4)    2018   [Refereed]

Conference Activities & Talks

 
Interface Characterization of Nitrided a- and m-Face 4H-SiC MOS Structures Using Distributed Circuit Model
Xufang Zhang, Dai Okamoto (Univ. of Tsukuba), Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada (AIST), Noriyuki Iwamuro, Hiroshi Yano (Univ. of Tsukuba)
Applied Physics Society, thin film and surface physics working group, 24th meeting   25 Jan 2019   
Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities
Tetsuo Hatakeyama
Applied Physics Society, Advanced power semiconductors working group, 12th meeting "The understanding of SiC MOS interfaces"   17 Dec 2018   
IIA-23 The Effect of Crystal Faces on the mobility and the Trap Density in SiO2/ SiC Interfaces
Tetsuo Hatakeyama
The 5th Meeting on Advanced Power Semiconductors   17 Nov 2018   
IIA-22 Scattering Origins of Inversion Channel Electron on 4H-SiC MOSFET Investigated by Ultralow Net Concentration P-type Epitaxial Wafers
Hirohisa Hirai, Tetsuo Hatakeyama
The 5th Meeting on Advanced Power Semiconductors   17 Nov 2018   
IIA-21 Temperature dependence of Hall-effect mobility in 4H-SiC n-MOS channels on nitrided a- and mfaces and consideration on the carrier scattering mechanisms
Hirohisa Hirai, Tetsuo Hatakeyama
The 5th Meeting on Advanced Power Semiconductors   17 Nov 2018