Papers

Peer-reviewed
2006

Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
  • T. Yokoya
  • T. Nakamura
  • T. Matushita
  • T. Muro
  • H. Okazaki
  • M. Arita
  • K. Shimada
  • H. Namatame
  • M. Taniguchi
  • Y. Takano
  • M. Nagao
  • T. Takenouchi
  • H. Kawarada
  • T. Oguchi
  • Display all

Volume
7
Number
First page
S12
Last page
S16
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.1016/j.stam.2006.02.014
Publisher
NATL INST MATERIALS SCIENCE

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of similar to 23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (E-F) exhibit a systematic shift of E-F, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near E-F of a heavily boron-doped diamond superconductor is also presented. (c) 2006 NIMS and Elsevier Ltd. All rights reserved.

Link information
DOI
https://doi.org/10.1016/j.stam.2006.02.014
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000243386300004&DestApp=WOS_CPL
ID information
  • DOI : 10.1016/j.stam.2006.02.014
  • ISSN : 1468-6996
  • Web of Science ID : WOS:000243386300004

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