2024年2月1日
Leaky-integrate-and-fire operation with signal amplification using gate-controlled carrier-injection silicon-on-insulator transistor
Japanese Journal of Applied Physics
- ,
- ,
- 巻
- 63
- 号
- 2
- 開始ページ
- 02SP83
- 終了ページ
- 02SP83
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.35848/1347-4065/ad1ca2
- 出版者・発行元
- IOP Publishing
Abstract
This work demonstrated leaky-integrate-and-fire (LIF) behavior using a gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr) and confirmed its signal amplification capability. We believe that a large-scale spiking neural network requires neural devices capable of signal amplification to effectively drive multiple post-synaptic neurons. The GCCI SOI-Tr could realize a capacitorless LIF behavior with a gate-controlled weight parameter. In addition, significant signal amplification might be achieved by scaling the GCCI SOI-Tr.
This work demonstrated leaky-integrate-and-fire (LIF) behavior using a gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr) and confirmed its signal amplification capability. We believe that a large-scale spiking neural network requires neural devices capable of signal amplification to effectively drive multiple post-synaptic neurons. The GCCI SOI-Tr could realize a capacitorless LIF behavior with a gate-controlled weight parameter. In addition, significant signal amplification might be achieved by scaling the GCCI SOI-Tr.
- リンク情報
- ID情報
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- DOI : 10.35848/1347-4065/ad1ca2
- ISSN : 0021-4922
- eISSN : 1347-4065
- ORCIDのPut Code : 150330826