Kyoto University Undergraduate School of Electrical and Electronic Engineering deployed a course of circuit exercise on the premise of BYOD-PC from FY 2016. This course is a compulsory subject for the school, so that the course curriculum was desi...
Journal of the Vacuum Society of Japan 59(5) 113-120 Jan 2016 [Refereed]
Recent progress of cluster ion beam was overviewed. Various applications, such as nano-fabrication and biological material analysis, have been developed by using cluster effects, which are due to high-density and multiple collision between cluster...
RAPID COMMUNICATIONS IN MASS SPECTROMETRY 28(8) Apr 2014 [Refereed]
RATIONALE: Ar gas cluster ion beam secondary ion mass spectrometry (Ar-GCIB SIMS) has been developed as one of the most powerful tools used for analyzing complex biological materials because of its distinctively high secondary ion yield of large o...
APPLIED PHYSICS EXPRESS 7(5) 1-56602 May 2014 [Refereed]
Recent developments in cluster ion beams for secondary ion mass spectrometry (SIMS) have enabled the realization of molecular depth profiling and mass imaging of organic and biological materials. Massive Ar cluster beams present reduced surface da...
IEEE Transactions on Semiconductor Manufacturing 26 328-334 Aug 2013
In this paper, the ultrafine particle removal using CO2 gas cluster ion beam (GCIB) technology is investigated. The CO2 GCIB is irradiated the sample at an angle of 0 with respect to the surface normal. The higher particle removal efficiency can b...
Yoshinobu Wakamatsu, Hideaki Yamada, Satoshi Ninomiya, Satoshi Ninomiya, Brian N. Jones, Toshio Seki, Toshio Seki, Takaaki Aoki, Takaaki Aoki, Roger Webb, Jiro Matsuo, Jiro Matsuo
AIP Conference Proceedings 1321 233-236 Dec 2010
Secondary Ion Mass spectrometry (SIMS) has been generally used in the field of material sciences. In recent years, it has also been applied for molecular imaging of biological samples. Nevertheless, molecular ions derived from the large molecules ...
K. Ichiki, S. Ninomiya, S. Ninomiya, T. Seki, T. Seki, T. Aoki, T. Aoki, J. Matsuo, J. Matsuo
AIP Conference Proceedings 1321 294-297 Dec 2010
Gas cluster ion presents various irradiation effects such as high sputtering yields. It is important to study the optimum condition of incident cluster ion beam for applications in surface modification technology. In this study, the effects of inc...
Y. Yamamoto, K. Ichiki, S. Ninomiya, S. Ninomiya, T. Seki, T. Seki, T. Aoki, T. Aoki, J. Matsuo, J. Matsuo
AIP Conference Proceedings 1321 298-301 Dec 2010
The sputtering yields of organic materials under large cluster ion bombardment are much higher than those under conventional monomer ion bombardment. The sputtering rate of arginine remains constant with fluence for an Ar cluster ion beam, but dec...
The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF3) gas were examined. An etching rate of 40 μm/min or higher was obtained even at room temperature when a ClF3 molecular cluster was forme...
The surface of L-leucine films irradiated with an Ar5000 cluster ion beam (5 keV) was characterized by using the X-ray reflective (XRR) measurement method, atomic force microscopy (AFM) and ellipsometry. No significant damage was detected on the s...
T. Seki, Y. Yoshino, T. Senoo, K. Koike, S. Ninomiya, T. Aoki, J. Matsuo
AIP Conference Proceedings 1321 317-320 Dec 2010
The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. ClF3-Ar neutral cluster was generated and the Si etching characteristics with this beam were investigated. ClF3 is very high reactive ...
IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology 114-115 Jul 2010
Molecular dynamics (MD) simulations of small boron clusters impacting on silicon (100) surface were carried out. The impacts of B10, B18 and B36 accelerated with 2keV, 3.6keV and 7.6keV (200eV per boron atom) showed characteristic irradiation effe...
<p>Recent progress of SIMS technique is reported in conjunction with novel primary ion beams and advanced mass spectrometers. Numerous applications of SIMS have been proposed and demonstrated in last decade, covering from organic semiconductors to...
Journal of the Vacuum Society of Japan 59(5) 113-120 2016
 Recent progress of cluster ion beam was overviewed. Various applications, such as nano-fabrication and biological material analysis, have been developed by using cluster effects, which are due to high-density and multiple collision between c...
We characterized the thickness and surface damage layer of poly(methyl metacrylate) (PMMA) organic films irradiated with Ar cluster or monomer ion beam using ellipsometry. A heavily damaged layer was detected on the surface of the PMMA film irradi...
Materials Research Society Symposium Proceedings 1181 135-140 May 2010
Ar cluster ions in the size range 1000-16000 atoms/cluster were irradiated onto Si substrates at incident energies of 10 and 20 keV and the sputtering yields were measured. Incident cluster ions were size-selected by using the time-of-flight (TOF)...
A brief overview for recent progress of cluster ion beams is presented in conjunction with atomistic collision dynamics, cluster size effects and nano-process developments. Unique characteristics of cluster ion beam are utilized not only for nano-...
Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009 131-132 Dec 2009
Damage accumulation and annihilation processes with low-energy boron implantation were studied by molecular dynamics (MD) simulation. The MD simulation of B atom accelerated with 500eV iteratively implanted into Si(100) target showed that the numb...
Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009 84-85 Dec 2009
Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si imp...
Journal of the Mass Spectrometry Society of Japan 57(3) 117-121 Jun 2009
We developed a processing technique for biological samples, that is, animal cells, for imaging mass spectrometry using gas cluster ion beams. Secondary ion mass spectrometry has been investigated for cellular imaging with high spatial resolution. ...
IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology 49-54 Sep 2008
By the recent development of high-performance computing, molecular dynamics method has been a powerful technique for analyzing collisions between cluster and solid target system. In this paper, molecular dynamics simulations of various kinds of cl...
Journal of the Mass Spectrometry Society of Japan 56(4) 201-208 Aug 2008
In this paper, we describe mass spectrometric techniques using swift heavy ions, for biological application. Desorption of large biomolecular ions due to irradiation by swift heavy ions was first observed in 1974, and the time-of-flight mass spect...
Applied Physics Express 1 0340021-0340023 Mar 2008
We have fabricated carbon nanotubes (CNTs) using a catalyzed growth technique that we call the carbon transmission method (CTM). We could control independently functions for carbon source gas supply and CNT growth by using a foil barrier (Ag) pene...
<p> "Non-linear Effect" is one of the unique phenomena in cluster ion impacts, where many atoms are collided each other instantaneously. Novel techniques for Nano-Processing and material analysis have been developed in the last decade, and will g...
Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 23-24 Dec 2007
The MD simulations of B monomer and small cluster implantation were performed. The non-linear effect for implant range was observed when the incident energy is as low as few hundreds eV/atom, where the B10 or B18 cluster implantation gives deeper ...
Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 53-54 Dec 2007
More than ten years have passed since cluster ion implantation was proposed by Kyoto University. Cluster ion implanters equipped with a specially designed ion source are announced for device manufacturing. This technique is now a candidate for ult...
Novel Materials Processing by Advanced Electromagnetic Energy Sources 231-234 Dec 2005
This chapter discusses the surface structure dependence of impact processes of gas cluster ions. The surface modification processes utilizing the impact of large cluster ions is also proposed. One of the unique properties of cluster ion impact is ...
Novel Materials Processing by Advanced Electromagnetic Energy Sources 219-222 Dec 2005
This chapter reveals the experimental study of cluster size effect with size-selected cluster ion beam. A size-selected gas cluster ion beam (GCIB) system is developed to study the size effects of energetic large cluster ion bombardments on a soli...
L. K. Ono, T. Aoki, T. Aoki, T. Seki, T. Seki, J. Matsuo, A. Itoh
Novel Materials Processing by Advanced Electromagnetic Energy Sources 227-230 Dec 2005
This chapter discusses the gas cluster ion beam source for secondary ion emission measurements. When solids are bombarded with cluster ions, collision cascades induced by individual constituent atoms of the cluster overlap each other. Energy densi...
Materials Research Society Symposium Proceedings 908 18-24 Dec 2005
To investigate the size-effect of reactive clusters on sputtering processes, we performed molecular dynamics (MD) simulations of reactive cluster ions with various sizes impacting on solid targets. Various sizes of fluorine clusters, (F2)30, (F2)3...
Surface and Coatings Technology 196 198-202 Jun 2005
Energy resolved time of flight (ERTOF) mass spectroscopy has been developed to measure the energy and size distributions in a gas cluster ion beam (GCIB). Gas cluster ions, being aggregates of a few to several thousands of atoms, were generated by...
Materials Research Society Symposium Proceedings 843 183-188 Jun 2005
Oblique irradiation using a gas cluster ion beam (GCIB) has been studied in order to achieve low-damage smoothing of magnetic materials. We investigated how the surface morphology and surface roughness depended on the angle of incidence. Quite smo...
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 230 483-488 Apr 2005
Total sputtering yields have been measured for SiO2 and Cu targets bombarded with Si ions at an incident energy between 500 keV and 5.0 MeV using a quartz crystal microbalance technique. In order to measure total yields accurately, we have develop...
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 230 489-494 Apr 2005
We have measured both secondary neutral and ionized particles from an InSb target under 3.0 MeV Si ion bombardment. Measurements of both ions and neutrals have not been carried out so far in the MeV-energy range. The mass spectra and axial emissio...
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 228 46-50 Jan 2005
Molecular dynamics (MD) simulations of cluster and solid target collisions were performed in order to understand the relationship between surface deformation processes and cluster sizes. MD simulations of single impacts of clusters with various si...
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 216 185-190 Feb 2004
Molecular dynamics (MD) simulations of Ar cluster impacts on Si surfaces were performed in order to examine the evolution of surface morphology with cluster irradiations. The MD results revealed that the impact process of cluster is different depe...
Materials Research Society Symposium - Proceedings 792 497-502 Dec 2003
In order to understand the characteristics of surface modification process with cluster ion irradiation, molecular dynamics simulations of Ar cluster impacting on Si surface with various surface structures were carried out. It was found that the s...
Materials Research Society Symposium - Proceedings 792 599-604 Dec 2003
Ar penetration during gas cluster ion beam (GCIB) irradiation has been investigated using secondary ion mass spectroscopy (SIMS). The concentration of Ar rose to a maximum and then decreased gradually with increasing depth. The depth of the Ar pen...
Materials Research Society Symposium - Proceedings 792 623-628 Dec 2003
A size-selected gas cluster ion beam (GCIB) system has been developed to study the size effects of energetic large cluster ion bombardments on a solid surface for the first time. This system equipped a permanent magnet with a magnetic flux density...
A. Nakai, T. Aoki, T. Seki, J. Matsuo, G. H. Takaoka, I. Yamada
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 206 842-845 May 2003
Smoothing effect is one of the advantages of cluster ion beam. It is important to estimate an ion dose to achieve required surface smoothness. The smoothing rate with cluster ion beam depends on surface profiles. In this work, modeling of surface ...
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 206 838-841 May 2003
New surface modification processes have been demonstrated using gas cluster ion irradiations, because of the unique interaction between cluster ions and surface atoms, atomistic mechanisms of cluster ion bombardment must be understood for the furt...
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 206 861-865 May 2003
Molecular dynamics simulations of Ne, Ar and Xe clusters with various sizes impacting on Si surfaces were performed in order to study damage formation processes. When cluster size ranged from several tens to several thousands and accelerated energ...
Noriaki Toyoda, Jiro Matsuo, Takaaki Aoki, Isao Yamada, David B. Fenner
Applied Surface Science 203-204 214-218 Jan 2003
Secondary ion mass spectrometry (SIMS) with gas cluster ion beams (GCIB) was studied with experiments and molecular dynamics (MD) simulations to achieve a high-resolution depth profiling. From MD simulations of Ar cluster ion impact on a Si substr...
Technical report of IEICE. SDM 102(540) 25-28 Dec 2002
Low energy ion implantation with several hundreds eV of implant energy is one of the important technique for advanced CMOS device fabrication. As the incident energy decreases and the implant range of dopants is reduced, various problems such like...
Technical report of IEICE. SDM 100(517) 23-28 Dec 2000
Formation of precursors and desorption of etching products by fluorine ion irradiation were studied using molecular dynamics simulation. When F atoms impact sequentially on a Si substrate, a mixed layer of F and Si atoms is formed on the surface. ...
KUSABA T., SEKI T., AOKI T., MATSUO J., KASE M., GOTO K., SUGII T., YAMADA I.
Technical report of IEICE. SDM 98(445) 97-104 Dec 1998
It is discussed that damage formation and enhanced diffusion by decaborane ion implantation. In the case of 900℃ annealing, TED was suppressed as the implant energy decreased. During annealing at 900°, 950℃ and 1000℃, the diffusion of boron atoms ...
Sputtering with gas cluster ions, which are aggregates of a few thousands of atoms, has been investigated experimentally and theoretically. Cluster ion beam etching is equivalent to low-energy high-current ion etchings with very low damage. Intere...
AOKI T., SHIMADA N., TAKEUCHI D., MATSUO J., INSEPOV Z., YAMADA I.
Technical report of IEICE. SDM 96(396) 49-54 Dec 1996
Cluster consists of several tens to thousands atoms/molecules, and cluster ion beam technique provides equivalent low-energy ion irradiation. The implant profile by B_<13> cluster, with the energy of 230eV/atom, is same as one by the B monomer whi...
