論文

2018年7月10日

SIMS技術の飛躍的発展を支える新技術:新奇なイオンビーム開発から先端質量分析法まで

表面と真空
  • 松尾 二郎
  • ,
  • 瀬木 利夫
  • ,
  • 青木 学聡

61
7
開始ページ
426
終了ページ
434
記述言語
日本語
掲載種別
研究論文(学術雑誌)
DOI
10.1380/vss.61.426
出版者・発行元
公益社団法人 日本表面真空学会

<p>Recent progress of SIMS technique is reported in conjunction with novel primary ion beams and advanced mass spectrometers. Numerous applications of SIMS have been proposed and demonstrated in last decade, covering from organic semiconductors to cells and tissues. One of the biggest problems was "Static-Limit" for analysis of organic molecules, which is very fragile for ion bombardment. After innovation of massive cluster ion beams, the issue of "Static-Limit" has been overcame. This opens a new possibility for SIMS to analyze organic materials. Ultra-high mass resolution mass spectrometer, MS/MS technique, cationization enhancement and future prospects of SIMS are discussed.</p>

リンク情報
DOI
https://doi.org/10.1380/vss.61.426
CiNii Articles
http://ci.nii.ac.jp/naid/130007403877
ID情報
  • DOI : 10.1380/vss.61.426
  • ISSN : 2433-5835
  • CiNii Articles ID : 130007403877
  • identifiers.cinii_nr_id : 9000003434567
  • ORCIDのPut Code : 74780589

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