In semiconductor industry, high accuracy measurement is important for improvement of a yield rate. By the technical development in recent semiconductor industry, the circuit element of semiconductor is getting smaller. However, there is not clear standard for the measurement of line profile as a critical dimension today. In this research, we aim to establish the measurement method for new semiconductor structures, FinFET. FinFET has 3D structure unlike conventional semiconductor structure. In this report, we measure the line profile and CD value of FinFET by TEM and CD-SEM in sub-nanometer order. Then, we compare the both results.