論文

査読有り
2010年2月

Aluminum tolerance associated with enhancement of plasma membrane H plus -ATPase in the root apex of soybean

SOIL SCIENCE AND PLANT NUTRITION
  • Yu-Seon Kim
  • ,
  • Won Park
  • ,
  • Hai Nian
  • ,
  • Takayuki Sasaki
  • ,
  • Bunichi Ezaki
  • ,
  • Young-Seok Jang
  • ,
  • Gap-Chae Chung
  • ,
  • Hyun-Jong Bae
  • ,
  • Sung-Ju Ahn

56
1
開始ページ
140
終了ページ
149
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1111/j.1747-0765.2009.00437.x
出版者・発行元
WILEY-BLACKWELL PUBLISHING, INC

Seventeen soybean cultivars were screened to discern differences in aluminum (Al) sensitivity. The Sowon (Al-tolerant) and Poongsan (Al-sensitive) cultivars were selected for further study by simple growth measurement. Aluminum-induced root growth inhibition was significantly higher in the Poongsan cultivar than in the Sowon cultivar, although the differences depended on the Al concentration (0, 25, 50, 75 or 100 mu mol L-1) and the amount of exposure (0, 3, 6, 12 or 24 h). Damage occurred preferentially in the root apex. High-sensitivity growth measurements using India ink implicated the central elongation zone located 2-3 mm from the root apex. The Al content was lower 0-5 mm from the root apices in the Sowon cultivar than in the apices of the Poongsan cultivar when exposed to 50 mu mol L-1 Al for 12 h. Furthermore, the citric acid exudation rate was more than twofold higher in the Sowon cultivar. Protein production of plasma membrane (PM) H+-ATPase from the root apices (0-5 mm) was upregulated in the presence of Al for 24 h in both cultivars. This activity, however, decreased in both cultivars treated with Al and the Poongsan cultivar was more severely affected. We propose that Al-induced growth inhibition is correlated with changes in PM H+-ATPase activity, which is linked to the exudation of citric acid in the root apex.

リンク情報
DOI
https://doi.org/10.1111/j.1747-0765.2009.00437.x
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000275109100014&DestApp=WOS_CPL
ID情報
  • DOI : 10.1111/j.1747-0765.2009.00437.x
  • ISSN : 0038-0768
  • Web of Science ID : WOS:000275109100014

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