2018年
Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam
Springer Proceedings in Physics
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- 巻
- 202
- 号
- 開始ページ
- 321
- 終了ページ
- 326
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1007/978-3-319-73025-7_48
- 出版者・発行元
- Springer Science and Business Media, LLC
The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.
- リンク情報
- ID情報
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- DOI : 10.1007/978-3-319-73025-7_48
- ISSN : 1867-4941
- ISSN : 0930-8989
- ORCIDのPut Code : 49828544
- SCOPUS ID : 85043311107