矢嶋赳彬 (Takeaki Yajima) - マイポータル

Real-time information processing via volatile resistance change in scalable protonic devices

Satya Prakash Pati, Yifan Geng, Satoshi Hamasuna, Kantaro Fujiwara, Tetsuya Iizuka, Hisashi Inoue, Isao Inoue, Takeaki Yajima

Communications Materials 5(1) 2024年12月
Review of solid-state proton devices for neuromorphic information processing

Satya Prakash Pati, Takeaki Yajima

Japanese Journal of Applied Physics 63(3) 030801-030801 2024年3月1日査読有り招待有り最終著者責任著者
Resonant frequency modulation in inductive vibration power generator via resistive impedance control

Takeaki Yajima

IEEE Transactions on Power Electronics 39(1) 1269-1278 2023年12月
Zero-dimensionality of a scaled-down VO2 metal-insulator transition via high-resolution electrostatic gating

Takeaki Yajima, Yusuke Samata, Satoshi Hamasuna, Satya Prakash Pati, Akira Toriumi

NPG Asia Materials 15 39-1-39-6 2023年6月査読有り筆頭著者責任著者
Controlling proton volatility in SiO₂-capped TiO₂ thin films for neuromorphic functionality

T. Yajima, S. P. Pati

Applied Physics Letters 120(24) 241601-241601 2022年6月13日筆頭著者責任著者
Ultra-low-power switching circuits based on a binary pattern generator with spiking neurons

Takeaki Yajima

Scientific Reports 12 1150 2022年1月査読有り筆頭著者最終著者責任著者
Observation of the Pinch‐Off Effect during Electrostatically Gating the Metal‐Insulator Transition

Takeaki Yajima, Akira Toriumi

Advanced Electronic Materials 8 2100842-2100842 2021年11月21日査読有り筆頭著者責任著者
Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO2

T. Yajima, T. Nishimura, S. Migita, T. Tanaka, K. Uchida, A. Toriumi

Applied Physics Letters 117(18) 182902-182902 2020年11月2日査読有り筆頭著者責任著者
Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator

Takeaki Yajima, Tomonori Nishimura, Takahisa Tanaka, Ken Uchida, Akira Toriumi

Advanced Electronic Materials 6(5) 1901356-1901356 2020年5月査読有り筆頭著者責任著者
High-speed low-energy heat signal processing via digital-compatible binary switch with metal-insulator transitions.

T. Yajima, T. Tanaka, Y. Samata, K. Uchida, A. Toriumi

International Electron Devices Meeting (IEDM) 903-906 2019年12月査読有り筆頭著者責任著者
Analog Spike Processing with High Scalability and Low Energy Consumption Using Thermal Degree of Freedom in Phase Transition Materials.

T. Yajima, T. Nishimura, and A, Toriumi

VLSI (Technology) 18 27-28 2018年7月査読有り筆頭著者責任著者
Identifying the Collective Length in VO2 Metal-Insulator Transitions

Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

SMALL 13(12) 2017年3月査読有り筆頭著者責任著者
Functional Passive Material VO2 for Analogue Signal Processing with High-Speed, Low Power, and Robust Performance

T. Yajima, T. Nishimura, A. Toriumi

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 16 858-861 2016年査読有り筆頭著者責任著者
Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

NATURE COMMUNICATIONS 6 2015年12月査読有り筆頭著者責任著者
Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

Yajima, Takeaki, Hikita, Yasuyuki, Minohara, Makoto, Bell, Christopher, Mundy, Julia A., Kourkoutis, Lena F., Muller, David A., Kumigashira, Hiroshi, Oshima, Masaharu, Hwang, Harold Y.

Nature Communications 6 2015年4月査読有り筆頭著者責任著者
Enhanced Electrical Transparency by Ultrathin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces

Yajima, Takeaki, Minohara, Makoto, Bell, Christopher, Kumigashira, Hiroshi, Oshima, Masaharu, Hwang, Harold Y., Hikita, Yasuyuki

Nano Letters 15(3) 1622-1626 2015年査読有り筆頭著者責任著者
A heteroepitaxial perovskite metal-base transistor

Takeaki Yajima, Yasuyuki Hikita, Harold Y. Hwang

NATURE MATERIALS 10(3) 198-201 2011年3月査読有り筆頭著者