2005年4月
Transition of roughness evolution in Cu-In alloy films by the formation of intermetallic compounds
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
- ,
- ,
- 巻
- 44
- 号
- 4A
- 開始ページ
- 1932
- 終了ページ
- 1938
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.44.1932
- 出版者・発行元
- JAPAN SOC APPLIED PHYSICS
The evolution of the surface morphology of Cu-In alloy film has been studied using an atomic force microscope. Samples of Cu-In were prepared by sequential vacuum deposition: copper was deposited to 10-40nm thick first on a glass substrate, followed by the deposition of various amounts of indium to make the indium composition in the range of 0-75 at.%. Samples were prepared under three different conditions: A) deposited at room temperature (RT); B) deposited at RT and annealed at 120 degrees C in vacuo; and C) deposited at 120 degrees C. Samples formed by A and B (series A and B) showed a growth with a dynamical exponent beta of similar to 0.3 while the atomic ratio In/Cu was less than 2. The formation of CuIn(2) intermetallic compound was observed by X-ray diffraction as the atomic ratio approached 2. After that, beta suddenly increased to similar to 0.7, which was attributed to the segregation of excess indium atoms to form cap-shaped islands. For samples grown by C (series C), the roughness initially increased more rapidly with beta similar to 0.7 and decreased above In/Cu similar to 1. It showed a minimum at In/Cu = 2 and finally increased again with beta similar to 0.7 by forming indium islands, as in series A and B.
- リンク情報
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- DOI
- https://doi.org/10.1143/JJAP.44.1932
- CiNii Articles
- http://ci.nii.ac.jp/naid/150000044718
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000228810000086&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=21244454843&origin=inward
- ID情報
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- DOI : 10.1143/JJAP.44.1932
- ISSN : 0021-4922
- CiNii Articles ID : 150000044718
- SCOPUS ID : 21244454843
- Web of Science ID : WOS:000228810000086