佐々木 拓生

Real-time x-ray diffraction analysis of GaN remote epitaxy on sapphire substrates covered with directly grown graphene 

Journal of Vacuum Science & Technology B 43(5) 2025年9月1日  査読有り

Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN 

Journal of Applied Physics 137(5) 2025年2月4日  査読有り

Feature extraction and spatial imaging of synchrotron radiation X-ray diffraction patterns using unsupervised machine learning 

Science and Technology of Advanced Materials: Methods 4(1) 2024年4月15日  査読有り

Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements 

Japanese Journal of Applied Physics 63(2) 020901-020901 2024年2月5日  査読有り

Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN 

Applied Physics Express 17(2) 025502-025502 2024年2月1日  査読有り

Effect of crystallization of Ni catalyst on direct precipitation of multilayer graphene using W capping layer 

JOURNAL OF CRYSTAL GROWTH 555 2021年2月  査読有り

X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer 

JOURNAL OF CRYSTAL GROWTH 549 2020年11月  査読有り

In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates 

JAPANESE JOURNAL OF APPLIED PHYSICS 59(7) 2020年7月  査読有り

Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in-situ synchrotron X-ray diffraction 

APPLIED PHYSICS EXPRESS 13 055501 2020年4月  査読有り

In situ synchrotron X-ray diffraction reciprocal space mapping measurements in the RF-MBE growth of GaInN on GaN and InN 

Crystals 9(12) 631-1-631-7 2019年12月  査読有り

Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping 

JOURNAL OF CRYSTAL GROWTH 512(15) 33-36 2019年4月  査読有り

Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction 

JAPANESE JOURNAL OF APPLIED PHYSICS 56(8) 2017年8月  査読有り

Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction 

JOURNAL OF CRYSTAL GROWTH 468 135-138 2017年6月  査読有り

Strain relaxation and compositional separation during growth of InGaAs/GaAs(001) 

JOURNAL OF CRYSTAL GROWTH 468 241-244 2017年6月  査読有り

Nitride-MBE system for in situ synchrotron X-ray measurements 

JAPANESE JOURNAL OF APPLIED PHYSICS 55(5) 2016年5月  査読有り

Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction 

JAPANESE JOURNAL OF APPLIED PHYSICS 55(4) 2016年4月  査読有り

Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed in situ synchrotron X-ray diffraction 

APPLIED PHYSICS LETTERS 108(1) 2016年1月  査読有り

Surface X-ray diffraction during GaAs/MnSb/Ga(In) As epitaxial growth 

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 2016年  査読有り

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction 

JOURNAL OF APPLIED PHYSICS 118(18) 2015年11月  査読有り

Mechanisms Determining the Structure of Gold-Catalyzed GaAs Nanowires Studied by in Situ X-ray Diffraction 

CRYSTAL GROWTH & DESIGN 15(10) 4979-4985 2015年10月  査読有り